MEMS Diaphragm Offers Fresh Insights on Si Nanowires

IME researchers have described a MEMS diaphragm for characterising large compressive strain for Si nanowire piezoresistors. The diaphragm design enables Si nanowires to withstand extended compressive strain up to 1.7% without fracture, which is the highest compressive strain reported on Si nanowires to date. The new Si nanowire properties revealed in this study will bring Si nanowires a step closer to realising future MEMS sensor designs.

Reference:

Liang Lou et. al., “Characterization of silicon nanowire embedded in a MEMS diaphragm structure within large compressive strain range," IEEE Electron Device Letters, Vol 32, Pg. 1764 - 1766, 2011