Optimization of NEMS Pressure Sensors

IME and NUS researchers have developed a sensitive pressure sensor using silicon nanowire (SiNW) as the piezoresistive sensing element. By exploiting the superior piezoresistive property of silicon nanowire and its amenability to scaling down, the sensor demonstrated 15x higher sensitivity than that of similar piezoresistive-based sensors and could withstand more than 330 psi pressure, making it robust and suitable for minimally-invasive biomedical monitoring applications.

Reference:

Liang Lou et. al., “Optimization of NEMS Pressure Sensors with Multilayered Diaphragm Using Silicon Nanowires as Piezoresistive Sensing Elements," Journal of Electronic Materials, Vol. 22, Iss 5, 055012, May 2012