Personal Details

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Dr. DALAPATI, Goutam Kumar

Scientist II

Staff

Electronic Materials (ELE) Department

63194743

dalapatig@imre.a-star.edu.sg

2 Fusionopolis Way. Innovis, #08-03, Singapore 138634.


Research Details


  • Next generation solar cells
  • Earth abandant materials for Photovoltaic application (FeSi2, CuO, and CuS)
  • Inorganic solar cells (Si- and III-V-based)
  • Heterogeneous integration (III-V on Si platform) for electronic and optical aplications
  • Advanced CMOS front-end technology
  • Semiconductor process and technology
  • ALD High-K dielectrics for photovoltaic and electronic aplications
  • High mobility channel materials (GaAs, SiGe, strained-Si)
  • GaN power transistor
  • Thin film technology for electronic and optical applications
  • PVD and CVD technique for thin films technology
  • Growth and characterisation of advanced materials for electronic and optical applications
  • Advanced gate stack for high speed CMOS device
  • Surface passivation of semiconductor using ALD and PVD
  • Integration of high mobility channel materials and high-K gate dielectrics
  • Heteregenous integration of III-V and Ge on Si platform
  • Advanced CMOS devices & process
  • Heterogeneous Materials Integration for Advanced Memory and Logic Devices
  • Gallium Nitride Power Devices for Automotive Applications
  • Semiconducting β-FeSi2 for the Application to Thin Film Solar Cells 

April 2013 - present              Scientist II, Institute of Materials Research & Engineering (IMRE, A*STAR)

April 2011 March-2013         Scientist I, Institute of Materials Research & Engineering (IMRE, A*STAR)

January 2007-March 2011   Research Engineer, Institute of Materials Research & Engineering (IMRE, A*STAR)

2005-2006                            Post Doctoral Research Fellow, Silicon Nano Device Laboratory, Department of                                                       Electrical and Computer Engineering, National University of Singapore, Singapore.

2004 -2005                           Research Associate, Microelectronics Technology Center, School of Electrical,                                                        Electronic and Computer Engineering, University of Newcastle upon Tyne, UK.

2001-2003                            Research Assistant, Department of Electronics, Electrical and Communication                                                        Engineering, Indian Institute of Technology-Kharagpur, India

  • PhD, Jadavpur University, Kolkata, India, 2005
  • M. Sc. in Electronics Science (1st class), University of Calcutta, Kolkata, India, 2000
  • B. Sc. in Physics (1st class), University of Calcutta, Kolkata, India, 1998
  • A. Das, S. Chattopadhyay, and G. K. Dalapati, "Performance Improvement of La2O3/ p-GaAs MOS Capacitor by using Si Pasivation Layer," 5th IEEE International Conference on Computers and Devices for Communication (IEEE CODEC), Kolkata, India, poster presentation, (best poster award), 2012.
  • Kelvin, Do Thu Hien, G. K. Dalapati, "Atomic Layer Deposition (ALD) and Comparative Assessments of its Metal Oxides for Transistor Applications," Singapore Science and Engineering Fair (SSEF-2012),  Bronze Award
  • G. K. Dalapati, C. K. Chia, A. S. W. Wong, and D. Z. Chi, “Future Oxides and Channel Materials for Ultimate Scaling,”4th MRS-S Conference on Advanced Materials, Singapore, poster presentation, (best poster award), 2010.
  • 2013: Charing a session "Chemical vapor deposition for thin film application" 15th Asian Chemical Congress (ACC), RWS-Singapore.
  • 2013: Organizing committee memeber of IEEE internation conference in nanoelectronics (IEEE-INEC), RWS-Singapore.
  • 2013: Organizing committee member of 3rd Molecular Materials Meeting (M3), Biopolis-Singapore.  
  • 2012: Organizing committee member of 2nd Molecular Materials Meeting (M3), Biopolis-Singapore.
  • 2010: Organizing committee member of 4th MRS-S conference on advanced materials, IMRE-Singapore.
  • 2011-present: A*Star approved PhD supervisor
  • 2011-present: Reviewer, J. Vac. Sci. Technol. B
  • 2010-present: Reviewer, Surface science and coating technology
  • 2009-present: Reviewer, Thin Solid Films 
  • 2008-present: Reviewer, IEEE Transaction on Electron Devices
  • 2007-present: Reviewer, Semiconductor Science and technology 
  • G. K. Dalapati, C. K. Chia, C. Mahata, S. Krishnamoorthy, C. C. Tan, H. R. Tan, C. K. Maiti, and D. Z. Chi, “Impact of Buffer Layer on Atomic Layer Deposited TiAlO Alloy Dielectric Quality for Epitaxial-GaAs/Ge Device Application,” IEEE Trans. Electron Devices, vol. 99, pp. 192-199, 2013.
  • G. K. Dalapati, C. K. Chia, C. C. Tan, H. R. Tan, S. Y. Chiam, J. R. Dong, A. Das, S. Chattopadhyay, C. Mahata, C. K. Maiti, and D. Z. Chi, "Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy
    Dielectric," ACS Appl. Mater. Interfaces, vol. 5, pp. 949−957, 2013.
  • A. Kumar, G. K. Dalapati, H. Hidayat, F. Law, H. R. Tan, P. I. Widenborg, B. Hoex, C. C. Tan, D. Z. Chi, and A. G. Aberle, "Integration of beta-FeSi2 with poly-Si on glass for thin-film photovoltaic applications," RSC Adv., vol. 3, pp. 7733–7738, 2013.
  • H. F. Liu, S. B. Dolmanan, S. Tripathy, G. K. Dalapati, C. C. Tan, and D. Z. Chi, “Effects of AlN thickness on structural and transport properties of In-rich n-AlInN/AlN/p-Si(001) heterojunctions grown by magnetron-sputtering,” J. Phys. D: Appl. Phys., vol. 46, 095106, 2013.
  • G. K. Dalapati, T. K. S. Wong, Y. Li, C. K. Chia, A. Das, C. Mahata, H. Gao, S. Chattopadhyay, M. K. Kumar, H. L. Seng, C. K. Maiti, and D. Z. Chi, “Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping,” Nanoscale Research Letters, vol. 7:99, pp. 1-8, 2012. 
  • C. Mahata, S. Mallik, T. Das, C. K. Maiti, G. K. Dalapati, C. C. Tan, C. K. Chia, H. Gao, M. K. Kumar, S. Y. Chiam, H. R. Tan, H. L. Seng, D. Z. Chi, and E. Miranda, “Atomic layer deposited (TiO2)x(Al2O3)1-x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications,” Appl. Phys. Lett., vol. 100, pp. 062905-1-062905-4, 2012. 
  • H. F. Liu, C. C. Tan, G. K. Dalapati, and D. Z. Chi, “Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications,” J. Appl. Phys., vol. 112, pp. 063114-1—063114-5, 2012.
  • T. Das, C. Mahata, C. K. Maiti, G. K. Dalapati, C. K. Chia, D. Z. Chi, S. Y. Chiam, H. L. Seng, C. C. Tan, H. K. Hui, G. Sutradhar, and P. K. Bose, “Sputter-Deposited La2O3 on p-GaAs for Gate Dielectric Applications,” J. Electrochem. Soc., vol. 159 (2), pp. G15-G22, 2012.
  • Z. Xu, S. F. Yoon, Y. C. Yeo, C. K. Chia, Y. B. Cheng, and G. K. Dalapati, “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate,” J. Appl. Phys., vol. 111, pp. 044504-1—044504-4, 2012. 
  • C. C. Tan, C. T. Chua, G. K. Dalapati, D. Z. Chi, “Effect of Al incorporation on the crystallization kinetics of amorphous FeSi2 into poly beta-FeSi2 film on SiO2/Si(100) substrate,” Thin Solid Films, vol. 520, pp. 2336-2338, 2012.
  • S. L. Liew, Y. Chai, H. R. Tan, H. K. Hui, A. S. W. Wong, G. K. Dalapati, and D. Z. Chi, “Improvement in Photovoltaic Performance of Thin Film β-FeSi2/Si Heterojunction Solar Cells with Al Interlayer,” J. Electrochem. Soc., vol. 159 (1), pp. H52-H56, 2012. 
  • G. K. Dalapati, C. K. Chia, C. Mahata, T. Das, C. K. Maiti, M. K. Kumar, H. Gao, S. Y. Chiam, C. C. Tan, C. T. Chua, Y. B. Cheng, and D. Z. Chi, “Surface Passivation of GaAs Substrates with SiO2 Deposited Using ALD,” Electrochem. Solid-State Lett., vol. 14 (10), pp. G52-G55, 2011.
  • C. K. Chia, G. K. Dalapati, Y. Chai, S. L. Lu, W. He, J. R. Dong, D. H. L. Seng, H. K. Hui, A. S. W. Wong, A. J. Y. Lau, Y. B. Cheng, D. Z. Chi, Z. Zhu, Y. C. Yeo, Z. Xu, and S. F. Yoon, “Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge,” J. Appl. Phys., vol. 109, pp. 066106-1—066106-3, 2011.
  • G. K. Dalapati, S. L. Liew, A. S. W. Wong, Y. Chai, S. Y. Chiam, and D. Z. Chia, “Photovoltaic characteristics of p-β-FeSi2(Al)/n-Si heterojunction solar cells and the effects of interfacial engineering,” Appl. Phys. Lett., Vol. 98, 013507-1-013507-3, 2011.
  • G. K. Dalapati, M. K. Kumar ,C. K. Chia, H. GaO, B. Z. Wang, A. S. W. Wong, A. Kumara, S. Y. Chiam, J. S. Pan, and D. Z. Chi, “Interfacial and electrical characterization of atomic-layer-deposited HfO2 gate dielectric on high mobility epitaxial GaAs/Ge channel substrates,” J. Electrochem. Soc., vol. 157, pp. H825-H831, 2010.
  • G. K. Dalapati, A. Sridhara, A. S. W. Wang, C. K. Chia, and D. Z. Chi, “HfOxNy gate dielectric on p-GaAs,” Appl. Phys. Lett., vol. 94, pp. 073502-1— 073502-3, 2009.
  • H. J. Oh , J. Q. Lin, S. J. Lee, G. K. Dalapati, A. Sridhara, D. Z. Chi, S. Chua, G. Q. Lo, D. L. Kwong, “Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using X-ray photoelectron spectroscopy,” Appl. Phys. Lett., vol. 93, pp. 062107-1— 062107-3, 2008.
  • C. K. Chia, J. R. Dong, D. Z. Chi, A. Sridhara, A. S. W. Wong, M. Suryana, G. K. Dalapati, S. J. Chua, and S. J. Lee, “Effects of AlAs interfacial layer on material and optical properties of GaAs/Ge(100) epitaxy,” Appl. Phys. Lett., vol. 92, pp. 141905-1—141905-3, 2008.
  • G. K. Dalapati, A. Sridhara, A. S. W. Wong, C. K Chia, S. J. Lee, and D. Z. Chi, “Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs,” J. Appl. Phys., vol. 103, pp. 034508-1—034508-5, 2008.
  • G. K. Dalapati, H. J. Oh, S. J. Lee, A. Sridhara, A. S. W. Wang, and D. Z. Chi, “Energy-band alignments of HfO2 on p-GaAs substrate,” Appl. Phys. Lett., vol. 92, pp. 042120-1—042120-3, 2008.
  • G. K. Dalapati, A. Sridhara, A. S. W. Wong, C. K Chia, S. J. Lee, and D. Z. Chi, “Interface characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate,” Appl. Phys. Lett., vol. 91, pp. 242101-1—242101-3, 2007.
  • G. K. Dalapati, Y. Tong, W. Y. Loh, H. K. Mun, and B. J. Cho, “Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs,” Appl. Phys. Lett., vol. 90, pp. 183510-1—183510-3, 2007.
  • G. K. Dalapati, Y. Tong, W. Y. Loh, H. K. Mun, and B. J. Cho, “Electrical and interfacial characterization of atomic layer deposited high-K gate dielectrics on GaAs for advanced CMOS technology,” IEEE Trans. Electron Devices, vol. 54, pp. 1831-1837, 2007.
  • G. K. Dalapati, S. Chattopadhyay, K. S. K. Kwa, S. H. Olsen, Y. L. Tsang, R. Agaiby, P. Dobrosz , S. J. Bull, and A. G. O’Neill, “Impact of strained-Si thickness and Ge out diffusion on gate oxide quality for strained Si surface channel n-MOSFETs,” IEEE Trans. Electron Devices, vol. 53, pp. 1142-1152, 2006.
  • G. K. Dalapati, S. Chattopadhyay, L. S. Driscoll, A. G. O’Neill, K. S. K. Kwa, and S. H. Olsen, “Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method,” J. Appl. Phys., vol. 99, pp. 034501-034508, 2006.
  • A. R. Saha, S. Chattopadhyay, G. K. Dalapati, C. Bose, and C. K. Maiti “Effect of annealing on interface state density of Ni-silicided/Si1-xGex Schottky diode,” Mat. Sci. Semicond. Proc., vol. 8, pp. 249-253, 2005. 
  • C. K. Maiti, S. K. Samanta, S. Chatterjee, G. K. Dalapati, and L. K. Bera, “Gate dielectrics on strained-Si/SiGe heterolayers,” Solid-State Electron., vol. 48, pp. 1369-1389, 2004.
  • S. K. Samanta, G. K. Dalapati, S. Chatterjee, and C. K. Maiti, “Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers,” Appl. Surf. Sci., vol. 224, pp. 283-287, 2004.
  • G. K. Dalapati, S. Chatterjee, S. K. Samanta, and C. K. Maiti, “Electrical characterization of low temperature deposited TiO2 on strained-SiGe layers,” Appl. Surf. Sci., vol. 210, pp. 249-254, 2003. 
D. Z. Chi, S. L. Liew, A. S. W. Wong, G. K. Dalapati, “Photoelectric Transducer Using Iron Silicide And Aluminium”, US Provisional Patent Application No. 61/316,696 (23rd March 2010),

Last updated on : 04 Sep 2017 06:09 PM