Dielectric Reactive Ion Etcher
The Dielectric Reactive Ion Etcher has a CMOS compatible silicon wafer etch processing system. It is capable of processing 200mm diameter semi-standard silicon wafers with incoming particles of less than 50 at 0.2um.
Inductive Coupled Plasma Reactive Ion Etching System
The ICP-RIE (Inductive Coupled Plasma Reactive Ion Etching) system consists of 1 etching chamber and 1 loadlock chamber equipped with auto handling for wafer transfer. Chlorine or Fluorine-based etching system equipped with in-situ endpoint detection technique for plasma dry etching.
Ion Milling System
The Ion milling system consists of 1 etching chamber and 1 loadlock chamber equipped with auto handling for wafer transfer. Argon-based etching by physical ion bombardment etch equipped with in-situ SIMS endpoint detection technique. Capable of angled etching for profile control.
Reactive Ion Etching System
The Reactive Ion Etching system consists of 4 etching chambers, 1 transfer chamber and 3 cassette loading stations. It is equipped with automated robotic handling for wafer transfer, in-situ endpoint detection technique and electrostatic chuck capability for plasma dry etching.
Resist Ashing System
The Resist Ashing system consisting of dual ashing chambers, 1 coolplate and cassette loading stations equipped with automatic robotic handling for wafer transfer. It employs downstream plasma by microwave to generate a reduced ion density plasma to selectively remove photoresist from wafer surface. It is a high throughput tool.
Single Wafer Plasma Asher
The Single Wafer Plasma Asher is fully automated with planar microwave source. It is able to achieve high volume resist stripping after Implant, Dry-Etch, Wet etch etc. for 200mm to 300mm wafer fabrications.
The Wafer Cleaner has four separate process chambers with single wafer cleaning capabilities as well as four chemical delivery units that provide four different cleaning chemistries.
Front side DIW rinse and backside DIW rinse are available for cleaning, and unique Sahara IPA/N2 wafer drying is available on all four chambers.
Nitrogen can be dissolved in water for wafer cleaning.
The Spray Etcher allows spray etching of metal stack layers in a single wafer processing environment, for both 200mm and 300mm wafers.
Wafer is loaded manually for processing. Four etching chemistries are available on the tool at any given time, and two of the etching chemistries are reclaimable.
The etching of wafers can be captured and recorded through video.
Anodizing Wet Bench
The anodizing wet bench is used for silicon anodizing. It is composed of an anodizing bath and Quick Dump Rinse Tanks (QDR). For 200mm wafers only.
Solvent Wet Bench
The Solvent Wet Bench has three separate process tanks with batch wafers cleaning capabilities. Two chemical delivery units provide two different cleaning chemistries.
Front side DIW rinse and backside DIW rinse are available for cleaning and IPA/N2 wafer drying is available on all four chambers. It also has semi-auto robot wafer-carrier handling.
Copper Chemical-Mechanical Planarization (CMP) Tool
The Cu CMP tool creates a flat wafer surface using both chemicals and abrasive action. During the process, it is able to continuously measure the film thickness at multiple points across the wafer and adjust the polishing force accordingly for consistent surface flatness.
The manual coater consists of a Coating Module and Hot Plate, with a semi-auto dispense system using a syringe mounted on a fixture arm.
HF Vapour Release System
The HF/Alcohol CET process employs a reduced pressure, gas phase isotropic etch for removal of sacrificial SiO2 layers to release flexures or other MEMS devices.
The process is generally carried out at pressures between 75 and 350 torr providing controlled, residue-free etching, mitigating runaway or uncontrolled conditions.
Xenon Difluoride Etching Systems
Isotropic etching of silicon using xenon difluoride is an ideal solution for releasing MEMS devices. XeF2 shows nearly infinite selectivity to silicon over almost all standard semiconductor materials including photoresist, silicon dioxide, silicon nitride and aluminum. Being a vapor phase etchant, XeF2 avoids many of the problems typically associated with wet or plasma etch processes.