IME is capable of both 8-inch and 12-inch platform for sub-100nm ReRAM integration with CMOS technology down to 40nm. We are aiming for high memory bandwidth and high performance memory for storage class memory (SCM) applications. We have demonstrated the 64kb ReRAM array integrated with 180nm CMOS back-end-of-line (BEOL) technology.
Analog Memory for In-Memory Computing
Conventional computer with separated processor and memory units is suffering from a crucial bottleneck for efficient data movement. On the other hand, innovative computing paradigms such as in-memory computing are intensively studied to further enhance computing energy and time efficiencies toward next milestone. Besides, memory elements with capability of multi-level states per cell with the cross-point array integration forms a promising hybrid memory-computation unit for in-memory computing paradigm. Moreover, analog behavior in ReRAM is also one of the few memory technologies to present synaptic-like programming response as in biological observations, which is an essential building block for neuromorphic computing hardware.