Digital Memory Toward Storage Class Memory
  As the CMOS technology advances with Moore’s Law, the discrepancy of memory access time also grows between working memory (DRAM) and SSD storage (NAND FLASH). Emerging memory devices such as resistive RAM (ReRAM) has been regarded as an attractive candidate to close such access time gap in near future with additional memory capacity bonus over DRAM.

IME is capable of both 8-inch and 12-inch platform for sub-100nm ReRAM integration with CMOS technology down to 40nm. We are aiming  for high memory bandwidth and high performance memory for storage class memory (SCM) applications. We have demonstrated the 64kb ReRAM array integrated with 180nm CMOS back-end-of-line (BEOL) technology.

Analog Memory for In-Memory Computing

   

Conventional computer with separated processor and memory units is suffering from a crucial bottleneck for efficient data movement. On the other hand,  innovative computing paradigms such as in-memory computing are intensively studied to further enhance computing energy and time efficiencies toward next milestone. Besides, memory elements with  capability of multi-level states per cell with the cross-point array integration forms a promising hybrid memory-computation unit for in-memory computing paradigm. Moreover, analog behavior in ReRAM is also one of the few memory technologies to present synaptic-like programming response as in biological observations, which is an essential building block for neuromorphic computing hardware.

IME dedicates to the development of analog memories such as ReRAM and FeRAM in order to achieve high performance and high energy efficiency in-memory computing system. We have shown case the Al2O3/Ta2O5 based bilayer ReRAM with analog switching characteristics for synaptic applications.