|IME has developed cutting edge technologies for Through-Silicon Via (TSV) based 2.5D Through-Silicon Interposer (TSI) and 3-Dimensional IC integration. These will support the industrial manufacturing needs for next generation electronics devices that are being shaped by miniaturization, having faster processing ability, increased memory and richer functionality.
IME's research delivers TSV module that offers reduced wire length, heterogeneouS integration of Known Good Die (KGD), higher silicon efficiency, reduced area and highly miniaturized package.
It focuses on the development and refinement of 2.5DTSI which enables heterogeneous integration of various functional elements such as digital, RF, analog, MEMS and optical chips in a single module.
For enquiries, please contact:
Dr. Surya Bhattacharya
Tel: +65 6770 5456