1 November 2008
An invited paper in the area of nanowire devices entitled " Si, SiGe Nanowire Devices by Top-Down Technology and Their Applications" by IME researchers Navab Singh, Kavitha D. Buddharaju, S. K. Manhas, A. Agarwal, Subhash C. Rustagi, G.Q. Lo, N. Balasubramanian, and Dim-Lee Kwong was featured on the November cover issue (vol.55, No. 11. November 2008) of the prestigious journal IEEE Transactions on Electron Devices.
This is a special issue on 'Nanowire Transistors: Modeling, Device Design and Technology'. The IME paper reviews the current status of the nanowire technology in circuit and sensor applications, delineates the challenges and explores the opportunities provided by nanowire technology using top-down approach.
The issue features invited papers from some of the most prestigious universities and research centers worldwide such as Harvard University, University of California, Eindhoven University (Netherlands), Arizona University, and, IBM, Hewlette Packard among others. The cover page of the issue is adorned by the images of different nanowire device structures developed at IME and presented in this paper.