Collaboration between Institute of Microelectronics and Unisantis on the Development of Three-Dimensional Transistor Advances to Next Stage

 

4th December 2009 - The Institute of Microelectronics (IME) and leading technology research and development company Unisantis Electronics (Japan) Ltd. today inked another collaborative research agreement to advance on the development of the world's first three-dimensional transistor.

The development team, headed by Unisantis' chief technology officer Professor Fujio Masuoka, has been engaging in the development of the new three-dimensional transistor also known as the Surrounding Gate Transistor (SGT) for the past 24 months. They have successfully developed and evaluated a SGT device that is capable of exhibiting the electrical characteristics of a transistor. Moving ahead to the next phase of development, the team will embark in the development of the SGT structure along with a CMOS circuit.

From Left: Mr. Kinichi Fukuda (President of Unisantis), Mr. Balachandran (Director of Unisantis), Prof. Fujio Masuoka (Chief Technology Officer of Unisantis), Ms. Yena Lim (Managing Director of A*STAR), Prof. Kwong Dim-Lee (Executive Director of IME) and Dr. Patrick Lo (Program Director of Nano-Electronics and Photonics Program of IME) at the signing ceremony held on 4th Dec 2009.

The next-generation IC chips fabricated with the SGT could be up to 10 times faster than existing chips built using conventional, two-dimensional transistors with horizontally-arranged components. SGT-based chips could generate less heat and cost less to produce compared to existing ones. The SGT also allows further improvements in silicon-based semiconductors, in terms of transistor size and processing speed, for at least 30 more years before the theoretical limits are reached. Such improvements are necessary for new-generation IC chips to meet the computing power demanded by IT products and computing networks of ever-increasing functionality and complexity.

Related News: Unisantis and Institute of Microelectronics to Jointly Develop Breakthrough Three-Dimensional Transistor in Singapore