Memory

Title of PublicationAuthor(s)Name of Journal / Conference
The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatmentWang Yun-Hsiang (IME/NUS), Yung Chii Liang (NUS), Genesh Shankar Samudra (NUS), Chih-Fang Huang, Wei-Hung Kuo, Patrick Lo Guo-qiangOptics Express Vol. 24 No. 12 Published 13 Jun 2016 DOI#10.1364/OE.24.012501
Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance SpectroscopyHuakai Li (IME/NTU), Tupei Chen (NTU), Shaogang Hu (NTU), Pan Liu (NTU), Yang Liu (UESTU), Pooisee Lee (NUS), Xinpeng Wang, Hongyu Li, Guo-qiang LoIEEE Transactions on Electron Devices (TED), VOL. 62, NO. 8, AUGUST 2015, DOI#10.1109/TED.2015.2445339
A Novel RRAM Stack With TaOx/HfOy Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary
Switching of Back-to-Back Connected Subcells
Y. Z. Tang, Z. Fang, X. P. Wang, B. B. Weng, Z. X. Chen, G. Q. LoIEEE Electron Device Letters (EDL). Published VOL. 35, NO. 6, JUNE 2014. 10.1109/LED.2014.2314093
Impact of Ni Concentration on the Performance of Ni-Silicide/HfO2/TiN Resistive RAM (RRAM) CellsZ.X Chen, Z. Fang, Y.Wang, Y.Yang, A.Kamath, X.P.Wang, N.Singh, G.-Q.Lo, D.-L.Kwong and Y.H.WuJournal of Electronic Materials (JEM). Vol 43, No. 8, Aug 2014. DOI 10.1007/s11664-014-3309-9
The Role of Ti Capping Layer in HfOx-Based RRAM DevicesZ.Fang, X.P.Wang, B.B Weng, Z.P.Zhang, Z.X.Chen, Y.Z.Tang, G.Q.Lo, J.Provine (Stanford Univ), S.S Wong (Stanford Univ), H.-S.P.Wong (Stanford Univ), D.L.KwongIEEE Electron Device Letters (EDL). VOL. 35, NO. 9, SEPTEMBER 2014. 10.1109/LED.2014.2334311
Impact of Ni Concentration on the Performance of Ni-Silicide/HfO2/TiN RRAM CellsZ. X. Chen (IME/NUS), Z. Fang, Y. Wang (NUS), Y. Yang (NUS), A. Kamath, X. P. Wang, N. Singh, G.-Q. Lo, D.-L. Kwong, Y. H. Wu (NUS)JOURNAL OF ELECTRONIC MATERIALS Published online July 2014, Vol. 43, No. 11, 2014
DOI: 10.1007/s11664-014-3309-9
Role of interfacial layer on complementary resistive switching in the TIN/HfOx/TiN resistive memory deviceHai Zhong Zhang, Diing Shenp Ang, Chen Jie Gu, Kwang Sing Yew, Xin Peng Wang, and Guo Qiang LoApplied Physics Letters (APL)105, 222106 (2014) Published Online 2nd DEC 2014; doi: 10.1063/1.4903341
All-Metal-Nitride RRAM DevicesZhiping Zhang, Bin Gao (Peking Univ), Zhang Fang, Xinpeng Wang, Yanzhe Tang, Joon Sohn (Stanford Univ), Philip Wong (Stanford Univ), Simon Wong (Stanford Univ), G.Q.LoIEEE Electron Device Letters (EDL); VOL. 36, NO. 1, PUBLISHED JANUARY 2015; DOI: 10.1109/LED.2014.2367542