310 GHz Gain-Bandwidth Ge/Si Avalanche Photodetector

This paper describes the development of an avalanche photodetector (APD) for high speed data communications. The APD comprises a unique device structure design which is achieved by CMOS-compatible process using selective epitaxial growth of the charge and multiplication layers and by optimizing the electric field distribution in the depletion region. Compared to conventional APDs made of III-V compound materials, the new detector demonstrated 2x higher gain and a high responsivity of 12 A/W at 1550 nm to provide better signal transmission characteristics at lower cost.
 
Reference:
Ning Duan et. al., “310 GHz Gain-Bandwidth Product Ge/Si Avalanche Photodetector for 1550 Light Detection”,Optics Express, Vol. 20, Iss. 10, Pg. 11031 - 11036, 2012