Better Pressure Sensing in a Different Mode

IME researchers have described a pressure sensor that exploits nanowire field-effect transistor principles in the subthreshold mode. Compared to its inversion operation mode, the device exhibited 1000x enhancement in signal-to-noise ratio (S/N) and 4x increased pressure sensitivity in subthreshold mode, suitable for miniature low power pressure sensors.

Reference:

Pushpapraj Singh et. al., “Gate-bias controlled sensitivity and signal-to-noise ratio enhancement in nanowire FET pressure sensor," J. Micromech. Microeng., Vol. 21, 105007, 2011