FUSI: Gateway to Integration

IME researchers have designed and developed an integration scheme with a Ni fully silicided (FUSI) gate on a vertical nanowire-based metal-oxide-semiconductor field-effect transistors (MOSFET). The scheme enables nanowire devices to be incorporated into circuits as the threshold voltage (VT) can now be tuned independently. The scheme also favours further scaling down and could be applied to produce multiple VT devices in logic circuits under the same doping conditions.

Reference:

Z. X. Chen et. al., "Realization of Ni fully silicided gate on vertical Si nanowire MOSFETs for adjusting threshold voltage (VT)," IEEE Electron Device Letters, Vol 32, Pg 1495 - 1497, 2011