Junctionless SONOS Memory: Seamless Storage

IME researchers have developed a novel SONOS memory for next generation ultra-high density memory applications. Compared to conventional planar SONOS memory cell, the absence of a junction in the cell is much more amenable to device miniaturisation as the fabrication complexity and cost are significantly reduced. The junctionless SONOS memory exhibited high on/off ratio, full memory functionality with high read/write speed and excellent reliability performance.

Reference:

Y. Sun et. al., “Junctionless Vertical-Si-Nanowire-Channel-Based SONOS Memory with 2-bit Storage per Cell," IEEE Electron Device Letters, Vol 32, Pg 725 - 727, 2011