Integrated Circuits and AI Hardware
Sensors, Actuators and Embedded Memory
R & D Fab
Material, Device, Reliability Analysis
Junctionless SONOS Memory: Seamless Storage
IME researchers have developed a novel SONOS memory for next generation ultra-high density memory applications. Compared to conventional planar SONOS memory cell, the absence of a junction in the cell is much more amenable to device miniaturisation as the fabrication complexity and cost are significantly reduced. The junctionless SONOS memory exhibited high on/off ratio, full memory functionality with high read/write speed and excellent reliability performance.
Y. Sun et. al., “Junctionless Vertical-Si-Nanowire-Channel-Based SONOS Memory with 2-bit Storage per Cell," IEEE Electron Device Letters, Vol 32, Pg 725 - 727, 2011
Copyright A*STAR Institute of Microelectronics 2019