SiC Vacancy Qubits

Project objective

Demonstrate defect generation and entanglement in SiC “defect-spin” materials taking advantage of the potential long coherence time and planar platform manufacturability.  

Technical approach

Technical Approach


Demonstrated the single SiC generation with focused ion beam. This lays the foundation for the next step to couple SiC emitters to the cavities to enhance the collection efficiency. 

Key Result to date: Demonstration of precision defect creation and robust coherence time for SiC defect. 

Wang et al., Phys. Rev. Applied 7, 064021 (2017)

Wang et al., ACS Photonics 4, 1054 (2017)

Project Lead: Prof. Weibo Gao, NTU


Last update : 1/25/2019 3:16:50 PM