Personal Details

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Dr. LIU Hongfei

Senior Scientist I

Staff

Electronic Materials (ELE) Department

63194885

liuhf@imre.a-star.edu.sg

2 Fusionopolis Way. Innovis, #08-03, Singapore 138634.

http://www.sapub.org/journal/editorialdetails.aspx?JournalID=1039&PersonID=13413


Research Details


  • Molecular beam epitaxial (MBE), Metal Organic Chemical Vapor Deposition (MOCVD), thermal vapor deposition (TVD) and DC/RF-magnetron sputtering growth of III-V (/N) and ZnO semiconductor compounds and their related low-dimensional structures and devices;
  • Nanoscale photonic devices; Semiconductor nanostructures: design, processing, characterization and potential applications;
  • Thin films and heterostructures characterizations both structural and optical properties, in-situ and ex-situ techniques;
  • Growth and characterization of diluted magnetic semiconductors (spintronics).
  • Molecular Beam Epitaxy of Ga(Mn)N and InP-, GaAs- and GaNAs-based optoelectronic devices (VCSEL, EEL, LED, SESAM).
  • Sputtering deposition of ZnO-related film and nanostructures.
  • Post-growth thermal processing of semiconductor materials and heterostructures.
  • High-resolution x-ray diffractions.
  • ZnO-based thin films and nanostructures.
  • Doping behavior of extrinsic elements in ZnO host matrix.
  • Non-conventional inorganic solar cell materials.
  • III/Nitride-based heterostructures and quantum well/dots LEDs.
  • Graphene and non-graphene 2D materials.

04/13-present:  Senior Scientist I, Institute of Materials Research and Engineering (IMRE), Singapore 117602, Singapore

04/11-03/13:      Scientist III, Institute of Materials Research and Engineering (IMRE), Singapore 117602, Singapore

11/06-03/11:      Senior Research Engineer, Institute of Materials Research and Engineering (IMRE), Singapore 117602, Singapore

11/04-10/06:      Center for Optoelectronics, Department of Electrical and Computer Engineering, National University of                                             Singapore, Singapore 117576

06/04-08/04:      Institute of Solid State Physics, Jena University (Institut fur Festkorperphysik, Friedrich-Schiller-Universitat, Jena),                              Jena 07743, Germany and BATOP Semiconductor Optoelectronics GmbH, Germany

06/02-06/04:      Optoelectronics Research Center (ORC), Tampere University of Technology, Tampere 33720, Finland

06/01-06/02:      Physics Department, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin 53211, USA


 

  • Ph. D. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, P.R. China (1996-2001)
  • B. E. Xi'an Jiaotong University (1992-1996)
  • Best poster award: 4th Trilateral Conference on Nanoscience: Energy, Water and Healthcare (Singapore, Dec. 5-7, 2013)

2014-current:     Associate Editor, Journal of Nanoscience Letters

2014:                    Organizing committee, 2014 Laser and Optoelectronics Conference (LOC 2014)

2013-current:      Lead Guest Editor, Special Issue on 2D Materials: Fabrication, Characterization, Properties and Applications, Advances in                                                  Condensed Matter Physics

2013-current:      Editorial Board Member, World Research Journal of Chemistry

2011-current:      Editorial Board Member, International Journal of Optoelectronic Engineering

2008-Current:     Editorial Board Member, The Open Applied Physics Journal

2005-Current:     Member, Materials Research Society, Singapore (MRS-S)

H. F. Liu*, Y. J. Jin, M. Lin, S. Guo, A. M. Yong, S. B. Dolmanan, S. Tripathy, X. Z. Wang, J. Mater. Chem. C, DOI: 10.1039/C8TC04799E (2018). Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: Formation of regular 3D island-in-network nanostructures

 

H. F. Liu*, C. J. J. Lee, S. Guo, D. Z. Chi, Langmuir, DOI: 10.1021/acs.langmuir.8b03102 (2018). New insights into planar defects in layered α-MoO3 crystals

 

W. Yang*, H. Kawai, M. Bosman, B. Tang, J. Chai, W. L. Tay, J. Yang, H. L. Seng, H. Zhu, H. Gong, H. F. Liu, K. E. J. Goh, S. Wang*, D. Chi*, Nanoscale, DOI: 10.1039/C8NR07498D (2018). Interlayer interactions in 2D WS2/MoS2 heterostructure monolithically grown by in-situ physical vapor deposition

 

H. F. Liu*, C. J. J. Lee, Y. J. Jin, J. Yang, C. Y. Yang, D. Z. Chi, J. Phys. Chem. C, 122, 12122 (2018). Huge absorption edge blueshifts of layered α-MoO3 crystals upon thickness reduction approaching 2D nanosheets

 

H. F. Liu*, Y. J. Jin, Procedia Eng., 215C, 19 (2018). MOCVD Ge-on-GaAs and its p-type doping via incorporating Ga atoms

 

H. F. Liu*, Vacuum, 154, 44 (2018). A short review on thermal vapor sulfurization of semiconductor thin films for optoelectronic applications

 

H. F. Liu*, R. B. Yang, W. Yang, Y. Jin, Coryl J. J. Lee, Appl. Surf. Sci., 439, 583 (2018). Atomic layer deposition and post-growth thermal annealing of ultrathin MoO3 layers on silicon substrates: Formation of surface nanostructures

 

H. W. Liu, L. Zhang, H. F. Liu, S. Chen, S. Wang, Z. Z. Wong, K. Yao*, Ultrasonics, 89, 166 (2018). High-frequency ultrasonic methods for determining corrosion layer thickness of hollow metallic components

 

W. Y. Samuel Lim, C. B. Soh*, C. J. Poh, and H. F. Liu, Proc. Eng., 215, 17 (2018). Alcohol sensing properties of titanium dioxide and barium nitrate oxide microstructure device

 

O. T. Ng, C. B. Soh*, H. F. Liu, X. S. Nguyen, Edwin Y. C. Ng, Proc. Eng., 215, 111 (2018). Reduction in EMI with BaTiO3 and Fe3O4 thin films grown by UBM sputtering

 

H. F. Liu*, Y. Q. Cai, M. Y. Han, S. Guo, M. Lin, M. Zhao, Y. W. Zhang, and D. Z. Chi, Nano Res., 11, 1193 (2018). Aqueous and mechanical exfoliation, unique properties, and theoretical understanding of MoO3 nanosheets made from free-standing α-MoO3 crystals: Raman mode softening and absorption edge blue shift

 

H. F. Liu*, S. Guo, R. B. Yang, Coryl J. J. Lee, L. Zhang, ACS Appl. Mater. Interfaces, 9, 26201 (2017). Giant blistering of nanometer-thick Al2O3/ZnO films grown by atomic layer deposition: mechanism and potential applications

 

H. F. Liu*, ECS J. Solid State Sci. Technol., 6, P339-P344 (2017). Thermal vapor sulfurization of GaAs layers on sapphire substrates prepared by direct growth and lift-off and transfer

 

H. F. Liu*, R. B. Yang, S. Guo, Coryl J. J. Lee, and N. Yakovlev, J. Alloys Compd., 703, 225 (2017). Effect of annealing on structural and optical properties of ZnO/Al2O3 superlattice structures grown by atomic layer deposition at 150 °C

 

H. F. Liu*, J. Mol. Eng. Mater., 4, 1640010 (2017). Recent progress in atomic layer deposition of multifunctional oxides and two-dimensional transition metal dichalcogenides

 

H. F. Liu*, Q. Q. Dou, and C. S. Chua, RSC Adv., 6, 94139 (2016). Integration of p-type b-In2S3 thin films on III-nitride heterostructures for multiple functional applications

 

H. F. Liu*, Y. J. Jin, C. G. Li, S. B. Dolmanan, S. Guo, S. Tripathy, and C. C. Tan, RSC Adv., 6, 52575 (2016). High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD

 

H. F. Liu*, Y. J. Jin, and C. Y. Yang, CrystEngComm, 18, 4499 (2016). Droplet-induced dot, dot-in-hole, and hole structures in GaGe thin films grown by MOCVD on GaAs substrates

 

H. F. Liu*, J. Huang, C. G. Li, C. B. Soh, W. Liu, S. J. Chua, and D. Z. Chi, J. Mol. Eng. Mater., 3, 1550002 (2016). Effect of morphological and structural properties on SIMS depth profiles of InGaN/GaN multiple quantum wells grown on sapphire by MOCVD

 

H. F. Liu*, A. B. Chew, L. K. Tan, J. H. Teng, and D. Z. Chi, J. Vac. Sci. Technol. A, 34, 021517 (2016). Black-wax assisted lift-off and transfer of CVD grown graphene from copper foil substrates to various foreign substrates

 

H. F. Liu*, W. Liu, and D. Z. Chi, CrystEngComm, 18, 1871 (2016). Rotation of in-plane structural anisotropy at the interface of an a-plane InN/GaN heterostructure grown by MOCVD on r-plane sapphire

 

H. F. Liu*, W. Liu, S. Guo, and D. Z. Chi, J. Phys. D: Appl. Phys. 49, 085103 (2016). Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using ZnO buffer

 

H. F. Liu* and D. Z. Chi, Procedia Eng., 141C, 32 (2016). Synthesis of iron sulfide and iron oxide nanocrystal thin films for green energy applications

 

H. F. Liu*, S. L. Wong, D. Z. Chi, Chem. Vap. Deposition, 21, 241 (2015). CVD growth of MoS2-based two-dimensional materials

 

H. F. Liu*, A. Iskander, N. L. Yakovlev, D. Z. Chi, Mater. Lett., 160, 491 (2015). Anomalous SiO2 layer formed on crystalline MoS2 films grown on Si by thermal vapor sulfurization of molybdenum at elevated temperatures

 

H. F. Liu*, D. Z. Chi, Sci. Rep., 5, 11756 (2015). Dispersive growth and laser-induced rippling of large-area singlelayer MoS2 nanosheets by CVD on c-plane sapphire substrate

 

H. F. Liu*, Y. D. Wang, M. Lin, L. T. Ong, S. Y. Tee, and D. Z. Chi, RSC Adv., 5, 48647 (2015). Cobalt sulfide nanoparticles decorated on TiO2 nanotubes via thermal vapor sulfurization of conformal TiO2-coated Co(CO3)0.5(OH)×0.11H2O core-shell nanowires for energy storage applications

 

H. F. Liu*, S. B. Dolmanan, T. N. Bhat, S. Tripathy, Appl. Phys. Lett., 106, 176101 (2015). Comment on “Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system” [Appl. Phys. Lett. 105, 232113 (2014)]

 

H. F. Liu*, K. K. Ansah Antwi, Y. D. Wang, L. T. Ong, S. J. Chua, and D. Z. Chi, RSC Adv., 4, 58724 (2014). Atomic layer deposition of crystalline Bi2O3 thin films and their conversion into Bi2S3 by thermal vapor sulfurization

 

H. F. Liu*, K. K. Ansah Antwi, C. S. Chua, J. Huang, S. J. Chua, and D. Z. Chi, ECS Solid State Lett., 3, P131 (2014). Epitaxial synthesis, band offset, and photoelectrochemical properties of cubic Ga2S3 thin films on GaAs (111) substrates

 

H. F. Liu*, K. K. Ansah Antwi, J. F. Ying, S. J. Chua, and D. Z. Chi Nanotechnology, 25, 405702 (2014). Towards large area and continuous MoS2 atomic layers via vapor-phase growth: Thermal vapor sulfurization

 

H. F. Liu*, H. L. Seng, J. H. Teng, S. J. Chua, and D. Z. Chi, J. Cryst. Growth, 402, 155 (2014). Effects of lift-off and strain relaxation on optical properties of InGaN/GaN blue LED grown on 150 nm diameter Si (111) substrate

 

H. F. Liu*, C. G. Li, K. K. Ansah-Antwi, S. J. Chua, and D. Z. Chi, Mater. Lett., 128, 344 (2014). Electron-beam-induced carbon deposition on high-indium-content AlInN thin films grown on Si by sputtering at elevated temperature

 

H. F. Liu*, N. Yakovlev, D. Z. Chi, and W. Liu, J. Solid State Chem., 214, 91 (2014). Post-growth thermal oxidation of wurtzite InN thin films into body-center cubic In2O3 for chemical/gas sensing applications

 

H. F. Liu*, L. Zhang, S. J. Chua, and D. Z. Chi, J. Mater. Sci., 49, 3305 (2014). Crystallographic tilt in GaN-on-Si (111) heterostructures grown by metal-organic chemical vapor deposition

 

H. F. Liu*, K. K. Ansah Antwi, N. Yakovlev, H. R. Tan, L. T. Ong, S. J. Chua, and D. Z. Chi, ACS Appl. Mater. & Interfaces, 6, 3501 (2014). Synthesis and phase evolutions in layered structure of Ga2S3 semiconductor thin films on epiready GaAs (111) substrates

 

H. F. Liu*, K. K. Ansah Antwi, S. J. Chua, and D. Z. Chi, Nanoscale, 6, 624 (2014). Vapor-phase growth and characterization of Mo1-xWxS2 (0 £ x £ 1) atomic layers on 2-inch sapphire substrates

 

H. F. Liu*, S. B. Dolmanan, S. Tripathy, G. K. Dalapati, C. C. Tan, and D. Z. Chi, J. Phys. D: Appl. Phys., 46, 095106 (2013). Effects of AlN thickness on structural and transport properties of In-rich n-AlInN/AlN/p-Si heterostructures grown by magnetron-sputtering

 

H. F. Liu*, S. B. Dolmanan, L. Zhang, S. J. Chua, D. Z. Chi, M. Heuken, and S. Tripathy, J. Appl. Phys., 113, 023510 (2013). Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

 

H. F. Liu*, C. C. Tan, G. K. Dalapati, and D. Z. Chi, J. Appl. Phys., 112, 063114 (2012). Magnetron-sputter deposition of high-indium-content n-AlInN thin films on p-Si(001) substrates for photovoltaic applications

 

H. F. Liu*, D. Z. Chi, and W. Liu, CrystEngComm, 14, 7140 (2012). Layer-by-layer oxidation of InN(0001) thin films into body-center cubic In2O3(111) by cycle rapid thermal annealing

 

H. F. Liu*, C. C. Tan, and D. Z. Chi, J. Vac. Sci. Technol. A, 30, 041516 (2012). Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

 

H. F. Liu*, W. Liu, S. B. Dolmanan, S. Tripathy, S. J. Chua, and D. Z. Chi, J. Phys. D: Appl. Phys., 45, 195102 (2012). Effects of doping and indium inclusions on structural and optical properties of InN thin films grown by MOCVD

 

H. F. Liu* and D. Z. Chi, J. Vac. Sci. Technol. A, 30, 04D102 (2012). Magnetron-sputter deposition of Fe3S4 thin films and their conversion into pyrite (FeS2) by thermal sulfurization for photovoltaic applications

 

H. F. Liu*, W. Liu, S. J. Chua, and D. Z. Chi, Nano Energy 1, 316 (2012). Fabricating high-quality GaN-based nanobelts by strain-controlled cracking of thin solid films for application in piezotronics

 

H. F. Liu*, S. J. Chua, and D. Z. Chi, Mater. Lett., 72, 71 (2012). Effects of temperature and LT-ZnO template on structural and optical properties of thermal-evaporation deposited ZnO submicron crystals

 

H. F. Liu*, W. Liu, A. M. Yong, X. H. Zhang, S. J. Chua, and D. Z. Chi, J. Appl. Phys., 110, 063505 (2011). Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm

 

H. F. Liu*, S. J. Chua, G. X. Hu, and H. Gong, Open Appl. Phys. J. 4, 41 (2011). Deposition and characterizations of ZnO thin films on Al2O3 (0001) substrates with III-arsenide intermediating layers

 

H. F. Liu*, A. Huang, S. Tripathy, and S. J. Chua, J. Raman Spectrosc., 42, 2179 (2011). Metal-nanoparticles-coating-induced enhancement and weakening of resonant Raman scattering in ZnO: Effect of surface-electric field

 

H. F. Liu* and S. J. Chua, J. Cryst. Growth, 324, 31 (2011). Influence of phosphorus doping and post-growth annealing on electrical and optical properties of ZnO/c-sapphire thin films grown by sputtering

 

H. F. Liu*, A. Huang, and D. Z. Chi, J. Appl. Phys., 109, 083538 (2011). Anomalous temperature-dependency of phonon linewidths probed by Raman scattering from b-FeSi2 thin films

 

H. F. Liu*, E. S. Lim, P. K. H. Tung, and N. Xiang, Thin Solid Films 519, 3050, (2011). Fabrication and transfer of nanoporous alumina thin films for templating applications: Metal dots array deposition and porous ZnO film growth

 

H. F. Liu*, A. Huang, and D. Z. Chi, J. Phys. D: Appl. Phys., 43, 455405 (2010). Thermal annealing of nanocrystallite Fe3S4 films deposited on Si substrates by dc-magnetron sputtering at room temperature

 

H. F. Liu*, W. Liu, and S. J. Chua, J. Vac. Sci. Technol. A, 28, 590 (2010). Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c- and r-sapphire substrates employing ZnO sacrificial templates

 

H. F. Liu* and S. J. Chua, Appl. Phys. Lett., 96, 091902 (2010). Phosphorus doping behavior in ZnO thin films: effects of doping concentration and post-growth thermal annealing

 

H. F. Liu*, S. J. Chua, G. X. Hu, and H. Gong, J. Cryst. Growth., 312, 527 (2010). Evolution of resonant Raman scattering spectra of ZnO crystallites upon post-growth thermal annealing

 

H. F. Liu* and S. J. Chua, J. Appl. Phys., 106, 032511 (2009). Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO/Al2O3 (0001) thin films grown by RF-magnetron sputtering

 

H. F. Liu*, S. Tripathy, G. X. Hu, and H. Gong, J. Appl. Phys., 105, 053507 (2009). Surface optical phonon and A1(LO) in ZnO submicron crystals: effects of morphology and dielectric coating

 

H. F. Liu*, G. X. Hu, and H. Gong, J. Cryst. Growth., 311, 268 (2009). Growth mechanism and optical properties of In2O3 nanorods synthesized on ZnO/GaAs(111) substrate

 

H. F. Liu*, G. X. Hu, H. Gong, K. Y. Zang, and S. J. Chua, J. Vac. Sci. Technol. A, 26, 1462 (2008). Effect of oxygen on low-temperature growth and band alignment of ZnO/GaN heterostructures

 

H. F. Liu*, A. S. W. Wong, G. X. Hu, and H. Gong, J. Cryst. Growth., 310, 4305 (2008). Observation of interfacial reactions and recrystallization of extrinsic phases in epitaxial grown ZnO/GaAs heterostructures

 

H. F. Liu*, S. J. Chua, G. X. Hu, H. Gong, and N. Xiang, J. Appl. Phys., 102, 083529 (2007). Effects of substrate on the structure and orientation of ZnO thin-film grown by RF-magnetron sputtering

 

H. F. Liu*, S. J. Chua, G. X. Hu, H. Gong and N. Xiang, J. Appl. Phys., 102, 063507 (2007). Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by RF-magnetron sputtering on GaAs (001) substrates

 

H. F. Liu*, S. J. Chua, G. X. Hu, H. Gong and N. Xiang, J. Appl. Phys., 102, 043530 (2007). Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film

 

H. F. Liu*, S. J. Chua and N. Xiang, J. Appl. Phys., 102, 013504 (2007). On overannealing of GaIn(N)As / Ga(N)As multiple quantum wells grown by molecular beam epitaxy

 

H. F. Liu* and N. Xiang, Thin Solid Film 515, 4462 (2007). Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As / GaAs quantum wells

 

H. F. Liu*, N. Xiang, H. L. Zhou, S. J. Chua, P. Yang, and H. Moser, J. Crystal Growth 301-302 548 (2007). Anneal-induced structural changes of GaIn(N)As / Ga(N)As multiple quantum wells grown by molecular beam epitaxy

 

H. F. Liu*, S. J. Chua and N. Xiang, J. Appl. Phys., 101, 053510 (2007). Growth temperature- and thermal anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy

 

H. F. Liu*, N. Xiang and S. J. Chua, Nanotechnology, 17, 5278 (2006). Growth of InAs on micro- and nano-scale patterned GaAs (001) substrates by molecular beam epitaxy

 

H. F. Liu*, V. Dixit, and N. Xiang, J. Appl. Phys., 100, 083518 (2006). Effect of indium segregation on the optical and structural properties of GaInNAs/GaAs quantum well at emission wavelength of 1.3-mm

 

H. F. Liu*, N. Xiang, S. Tripathy, and S. J. Chua, J. Appl. Phys., 99, 103503 (2006). Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1-x

 

H. F. Liu*, N. Xiang, and S. J. Chua, Appl. Phys. Lett., 89, 71905 (2006). Influence of N incorporation on In content in GaInNAs / GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy

 

H. F. Liu*, N. Xiang, S. J. Chua, and M. Pessa, Appl. Phys. Lett., 88, 181912 (2006). Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum-wells upon post-growth annealing

 

H. F. Liu* and N. Xiang, J. Appl. Phys., 99, 53508 (2006). Influence of GaNAs strain compensation layers on the properties of GaIn(N)As / GaAs quantum wells upon annealing

 

H. F. Liu*, V. Dixit, and N. Xiang, J. Appl. Phys., 99, 13503 (2006). Anneal-induced interdiffusion in 1.3-mm GaInNAs / GaAs quantum well structures grown by molecular beam epitaxy

 

H. F. Liu*, N. Xiang, and S. J. Chua, J. Crystal Growth, 290, 24 (2006). Annealing behavior of N-bonding configurations in GaN0.023As0.997 ternary alloy grown on GaAs (001) substrate by molecular beam epitaxy

 

H. F. Liu*, N. Xiang, S. J. Chua, and S. Tripathy, J. Crystal Growth, 288, 44 (2006). Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy

 

H. F. Liu*, N. Xiang, S. Tripathy, and S. J. Chua, Thin Solid Film, 515, 759 (2006). Temperature dependence of Raman spectrum of GaNAs ternary alloys grown by molecular beam epitaxy

 

H. F. Liu*, S. Karirinne, C. S. Peng, T. Jouhti, J. Konttinen and M. Pessa, J. Crystal Growth 263, 171 (2004). In-situ annealing effect on the surface and microscopic structure of near-surface GaInNAs / GaAs quantum wells grown by MBE

 

H. F. Liu*, C. S. Peng, J. Likonen, T. Jouhti, S. Karirinne, and M. Pessa, J. Appl. Phys. 95, 4102 (2004). Influence of Nitride and Oxide cap layers upon the annealing of 1.3-mm GaInNAs / GaAs quantum wells

 

H. F. Liu*, C. S. Peng, E. -M. Pavelescu, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa, Appl. Phys. Lett., 84, 478 (2004). Annealing effect on the optical and structural properties of 1.3-mm GaInNAs / GaAs quantum-well samples capped with dielectric layers

 

H. F. Liu*, C. S. Peng, J. Likonen, J. Konttinen, V.D.S. Dhaka, N. Tkachenko, and M. Pessa, IEE Optoelectron., 151, 267 (2004). Thermal annealing effect on 1.3 mm GaInNAs / GaAs quantum well structure capped with dielectric films

 

H. F. Liu*, C. S. Peng, E. -M. Pavelescu, S. Karirinne, T. Jouhti, M. Valden and M. Pessa, Appl. Phys. Lett., 82, 2428 (2003). Structure and optical properties of near-surface GaInNAs / GaAs quantum well at emission wavelength of 1.3 mm

 

H. F. Liu*, H. Chen, Zhiqiang Li, Li Wan, Q. Huang, Junming Zhou, J. Crystal Growth, 222, 503 (2001). Effect of rapid thermal annealing on the structural characteristics of cubic GaN epilayers grown on GaAs (001) by MBE

 

H. F. Liu*, H. Chen, Z. Q. Li, L. Wan, Q. Huang, and J. M. Zhou, J. Crystal Growth, 227-228, 390 (2001). Epitaxial growth and characterization of GaN films on (001) GaAs substrates by RF-MBE

 

H. F. Liu*, H. Chen, Zhiqiang Li, Li Wan, Q. Huang, Junming Zhou, N. Yang, Kun Tao, Y.J. Han, Y. Luo, J. Crystal Growth, 218, 191 (2000). MBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates

 

H. F. Liu*, Chen Hong, Li Zhiqiang, Wan Li, Huang Qi, Zhou Junming, Luo Yi, HanYanjun, ACTA  Phys. Sin., 49, 1132 (2000). Epitaxial growth of cubic and hexagonal GaN films on GaAs (001) substrates by MBE

 

H. F. Liu*, H. Chen, Zhiqiang Li, Li Wan, Q. Huang, Junming Zhou, N. Yang, Kun Tao, Y.J. Han, Y. Luo, J. Crystal Growth, 212, 391 (2000). Growth and properties of hexagonal GaN on GaAs (001) substrate by RF-molecular beam epitaxy using an AlAs nucleation layer

H. F. Liu*, W. Liu, S. J. Chua, and C. B. Soh, “Method for high-quality single crystal GaN-based nanobelts” Singapore Patent, SG201104702-4, filed on June 24, 2011; "Systems and Methods for fabricating longitudinally-shaped structures" US Patent, 13/532,736, filed on June 25, 2012.
S. Shannigrahi*, C. K. Tan, H. F. Liu, and K. Yao, “Lead free electro-optic ceramics” Singapore Patent, 201244, filed on Feb. 06, 2013.
S. Shannigrahi*, Z. Q. Wang, C. K. Tan, H. F. Liu, K. Yao, L. K. Bera, M. Sharama, G. K. Dalapati “Photodarkening ultraviolet protective shield and the method of processing the films of the same” Singapore Patent, 201561, filed on Feb. 26, 2015.

Last updated on : 15 Nov 2018 11:22 AM