Personal Details

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Dr. TANOTO, Hendrix

Project Manager

Staff

Research, Project Management Office (PMO)

63194902

tanotoh@imre.a-star.edu.sg

2 Fusionopolis Way. Innovis, #08-03, Singapore 138634


Research Details


  • Terahertz technology
  • Semiconductor optoelectronics and nanophotonics
  • Novel design & growth and characterizations
  • Advanced lithography or patterning
  • Molecular Beam Epitaxy
  • X-ray diffraction (XRD)
  • Photoluminescence
  • Atomic force microscopy (AFM)
  • Terahertz technology
  • Semiconductor optoelectonics and nanophotonics
  • 2019- Present

Project Manager

  • 2018-2019

Deputy Head of Department, Structural Materials

  • 2016-2017

Head of Lab, IMRE

  • 2008-Current

Scientist, IMRE

  • 2007-2008

Project Officer, Nanyang Technological University

    
  • PhD, Nanyang Technological University (NTU), Singapore, 2009.
    Thesis: Monolithic integration of III-V compound semiconductor (GaAs) on silicon-based substrate employing solid-source molecular beam epitaxy (MBE) growth technique. Demonstration of quantum dot-based 1.3 micrometer light emitters on the integrated platform 

  • Bachelor of Engineering, Nanyang Technological University (NTU), Singapore, 2003.
  • Top 3 Borderless Award 2018, Ministry of Trade & Industry (MTI), as member of Operations and Technology Roadmapping (OTR) Programme.

  • Winner for the 2018 A*STAR Awards - Borderless Award, as member of Operations and Technology Roadmapping (OTR) Programme.

  • Funding award as finalist for the idea “BLIP” at the ETPL 2nd Design Thinking Challenge, pitched at the 2015 Media Exploit, Singapore.

  • Funding award as Top Ten Finalist for antibacterial sticker idea, “PROTECKER”, at the Design Thinking Challenge pitching, 2014 Startup Asia @ Singapore.

     

  • 2003-2007

A*STAR Graduate Scholarship

  • 2002-2003

Chartered semiconductor skills pipeline programme

  • 2003

IEEE Reliability/CPMT/ED chapter (Singapore) book prize

  • Project Management Professional (PMP) certification, Apr 2018.

  • MIT Professional Short Program certification on Additive Manufacturing, Boston, USA Aug 2017.

  • Certificate in Commercial Law and Technology Transfer, Temasek Polytechnic, Singapore, Feb 2016.

  • WDA Certification in “Develop a Risk Management Implementation Plan”, Singapore, Oct 2015.

  • WDA Certification in “Review Processes for Strategic Technology and Operation Roadmapping”, Singapore, Jun 2015.


  • X.Y. Peng, J.H. Teng, H.W. Liu, H. Tanoto, H.C. Guo, Z.M. Sheng, and J. Zhang, “Distortion reduction in strong terahertz signals using broadband attenuators with flat transmittance”, Journal of Physics D – Applied Physics, 49, 015501 (2016).

  • Q.Y. Wu, H. Tanoto, L. Ding, C.C. Chum, B. Wang, A.B. Chew, A. Bans, K. Banas, S.J. Chua, and J.H. Teng, “Branchlike nano-electrodes for enhanced terahertz emission in photomixers”, Nanotechnology, 26, 255201(2015).

  • H. Tanoto, J.H. Teng, Q.Y. Wu, M. Sun, Z.N. Chen, S.A. Maier, B. Wang, C.C. Chum, G.Y. Si, A.J. Danner, and S.J. Chua, “Nano-antenna in a photoconductive photomixer for highly efficient continuous wave terahertz emission”, Scientific Reports, 3, 2824 (2013). 

  • Y. Ren, W.K. Chim, L. Guo, H. Tanoto, J.S. Pan, and S.Y. Chiam, “The coloration and degradation mechanisms of electrochromic nickel oxide”, Solar Energy Materials and Solar Cells, 116, 83-88 (2013).

  • W. Zhang, W.M. Zhu, H. Cai,  M.L.J. Tsai, G.Q. Lo, D.P. Tsai,  H. Tanoto, J.H. Teng, X.H. Zhang, D.L. Kwong, and A.Q. Liu, “Resonance Switchable Metamaterials Using MEMS Fabrications”, IEEE Journal of Selected Topics in Quantum Electronics, 19, 4700306 (2013).

  • W. Zhang, A.Q. Liu, W.M. Zhu, E.P. Li, H. Tanoto, Q.Y. Wu, J.H. Teng, X.H. Zhang, M.L.J. Tsai, G.Q. Lo, and D.L. Kwong, “Micromachined switchable metamaterial with dual resonance”, Applied Physics Letters, 101, 151902 (2012).

  • H. Tanoto, J. H. Teng, and S. A. Maier. “Nano-antenna: towards highly efficient terahertz photomixer”, Laser Focus World feature article May 2012 (Invited).

  • H. Tanoto, J.H. Teng, Q.Y. Wu, M. Sun, Z.N. Chen, S.J. Chua, A. Gokarna , J.F. Lampin and E. Dogheche  in Materials Challenges and Testing for Supply of Energy and Resources, edited by Th. Böllinghaus, J. Lexow, T. Kishi, and M. Kitagawa (Springer, Germany, 2012).

  • W. M. Zhu, A. Q. Liu, X. M. Zhang, D. P. Tsai, T. Bourouina, J. H. Teng, X. H. Zhang, H. C. Guo, H. Tanoto, T. Mei, G. Q. Lo, and D. L. Kwong, “Switchable magnetic metamaterials using micromachining processes”, Advanced Materials 23, 1792–1796 (2011). Highlighted in the NPG Asia Materials, 23 May 2011.

  • W. M. Zhu, A. Q. Liu, W. Zhang, J. F. Tao, T. Bourouina, J. H. Teng, X. H. Zhang, Q. Y. Wu, H. Tanoto, H. C. Guo, G. Q. Lo, and D. L. Kwong, “Polarization dependent state to polarization independent state change in THz metamaterials”, Applied Physics Letters, 99, 221102 (2011).

  • Y. Yan, M. I. Rashad, E. J. Teo, H. Tanoto, J. H. Teng and A. A. Bettiol, “Selective electroless silver plating of three dimensional SU-8 microstructures on silicon for metamaterials applications”, Optical Materials Express 1, 1548-1554 (2011).

  • C.Y. Ngo, S.F. Yoon, H. Tanoto, H.K. Hui, D.R. Lim, Vincent Wong and S.J. Chua, Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature, Journal of Crystal Growth, doi:10.1016/j.jcrysgro.2010.11.161 (2010).

  • Y.Y. Liang, S.F. Yoon, C.Y. Ngo, H. Tanoto, K.P. Chen, W.K. Loke and E.A. Fitzgerald, Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate, Journal of Crystal Growth, doi:10.1016/j.jcrysgro.2010.11.133 (2010).

  • L. Tjahjana, B. Z. Wang, H. Tanoto, S. J. Chua, and S. F. Yoon, “Gallium arsenide (GaAs) island growth under SiO2 nanodisks patterned on GaAs substrates,” Nanotechnology 21, 195305 (2010).

  • H. Tanoto, S. F. Yoon, K. L. Lew, W. K. Loke, C. Dohrman, E. A. Fitzgerald, and L. J. Tang, “Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1-xGex/Si substrate,” Applied Physics Letters 95, 141905 (2009).

  • H. Tanoto, S. F. Yoon, T. K. Ng, C. Y. Ngo, C. Dohrman, E. A. Fitzgerald, L. H. Tang and C. H. Tung, “Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1-xGex/Si substrate,” Applied Physics Letters 95, 052111 (2009). Selected for the August 24, 2009 issue of Virtual Journal of Nanoscale Science & Technology.

  • K. P. Chen, S. F. Yoon, T. K. Ng, H. Tanoto, K. L. Lew, C. L. Dohrman, and E. A. Fitzgerald, “Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1-xGex/Si substrate,” Journal of Physics D - Applied Physics 42, 035303 (2009).

  • K. P. Chen, S. F. Yoon, T. K. Ng, H. Tanoto, K. L. Lew, C. L. Dohrman, and E. A. Fitzgerald, “Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes,” Journal of Applied Physics 104, 073710 (2008).

  • H. Tanoto, S. F. Yoon, C. Y. Ngo, W. K. Loke, C. Dohrman, E. A. Fitzgerald, and B. Narayanan, “Structural and optical properties of stacked self-assembled InAs/InGaAs quantum dots on graded Si1-xGex/Si substrate,” Applied Physics Letters 92, 213115 (2008). Selected for the June 9, 2008 issue of Virtual Journal of Nanoscale Science & Technology.

  • H. Tanoto, S. F. Yoon, W. K. Loke, K. P. Chen, E. A. Fitzgerald, C. Dohrman, and B. Narayanan, “Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy,” Journal of Applied Physics 103, 104901 (2008).

  • K. L. Lew, S. F. Yoon, H. Tanoto, K. P. Chen, C. L. Dohrman, D. M. Isaacson, and E. A. Fitzgerald, “InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer,” Electronics Letters 44, 243 (2008).

  • K. L. Lew, S. F. Yoon, W. K. Loke, H. Tanoto, C. L. Dohrman, D. M. Isaacson, and E. A. Fitzgerald, “High gain AlGaAs/GaAs heterojunction bipolar transistor fabricated on SiGe/Si substrate,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, 902 (2007).

  • H. Tanoto, S. F. Yoon, W. K. Loke, E. A. Fitzgerald, C. Dohrman, B. Narayanan, M. T. Doan, and C. H. Tung, “Growth of GaAs on vicinal Ge surface using low temperature migration-enhanced epitaxy,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24, 152 (2006).

1.      THz photomixer emitter and method, US Patent number: 9935355. Inventors: Jinghua Teng, Hendrix Tanoto, Qing Yang Steve Wu


Last updated on : 02 Apr 2019 02:12 PM