Personal Details

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Mr. WANG Benzhong

Senior Specialist II


Electronic Materials (ELE) Department


2 Fusionopolis Way. Innovis, #08-03, Singapore 138634.

Research Details

  • Low-dimensional nano-structures of semiconductor.
  • Opto-electronics of III-V semiconductor.
  • Epitaxial Growth of III-V compound semiconductor materials.
  • Design and fabrication of opto-electronic devices.
  • Photonic band gap structures and its applications
  • Material growth
    • Metalorganic Chemical Vapor Deposition (MOCVD)
    • Liquid Phase Epitaxy (LPE)
  • Device processes
    • Photolithography
    • ICP, RIE dry etching
  • Characteriztion and analysis
    • Photoluminescence (PL)
    • Hall
    • X-Ray Diffraction (XRD)
    • Atomic Force Microscopy (AFM)
    • Scanning Electron Microscope (SEM)
  • Nano fabrications
    • nanoimprinting
    • nanosphere lithography
    • electron beam lithography

  • 2D Photonic Band Gap Optical Cavity (PI)

  • Micro-Nano-Photonics and Lasers using Self-Aligned MOCVD Growth for Optical Communication and Other Applications

  • Monolithic Integration of Quantum Dot Structures

  • 2003 - Current
Research Fellow, IMRE
  • 2001 - 2002
Engineer, Finisar Corp. USA
  • 1998 - 2001
Research Fellow, IMRE
  • 1991 - 1998
Senior Engineer, State Key Laboratory on Integrated Opto-electronics, China
  • 1983 - 1991
Engineer, Jilin University, China
  • MSc, Jilin University, China, 1997
  • BSc, Jilin University, China, 1983
  • 2001 - Current
Member, IEEE
  • 1995 - 1998
Senior member, Chinese Electronics Society
  • Wang BZ and Chua SJ, "Optical properties of InAs quantum dots grown on InP (001) substrate by MOCVD", Phys. Stat. Sol. 224, 73 (2001).
  • Wang BZ, and Chua SJ, "Growth and optical properties of type-II InP/GaAs self-organized quantum dots", Appl. Phys. Lett. 78, 628 (2001).
  • Wang BZ, Chua SJ, Wang ZJ, and Liu SY, "Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (001) InP substrate by MOCVD", Physica E 8, 290 (2000).
  • Jin Z, Yang SR, Wang BZ, An HY, Ma CS, Liu SY, "The effects of misfit dislocation distribution and capping layer on excess stress", Appl. Phys. Lett. 74, 1230 (1999).
  • Peng YH, Wang BZ, Sun HB, Chen WY, Liu SY,"Design of quantum structure stripe lasers for low threshold current", Opt. Quant. Electron. 31, 23 (1999).
  • Jin Z, Wang BZ, Peng YH, Zhao FH, Chen WY, Liu SY, Gao CX, "Using the tensile stress field to control quantum dot arrangements", Surf. Sci. 423, L211 (1999).
  • Wang BZ, Zhao FH, Peng YH, Jin Z, Li YD, Liu SY, "Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate", Appl. Phys. Lett. 72, 2433 (1998).
  • Wang BZ, Peng YH, Zhao FH, Chen WY, Liu SY, Gao CX, "Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate", J. Crys. Growth 186, 43 (1998).
  • Wang BZ, Jin Z, Zhao FH, Peng YH, Li ZT, Liu SY, "Photoluminescence of InAs self-organized quantum dots formation on InP substrate by MOCVD" Opt. Quant. Electron. 30, 187 (1998).
  • Wang BZ, Zhao FH, Peng YH, Jin Z, Li YD, Yang SR, Liu SY, "Formation of self-organization InAs quantum dots on (001) InP substrate by As/P exchange reaction in MOCVD", Chem. Res. Chinese U. 14, 221 (1998).
  • Peng YH, Wang BZ, Chen WY, Liu SY, "Grid-pattern aligned InAs self-assembled quantum dots grown on InP substrate", Opt. Quant. Electron. 29, 985 (1997).
  • Chen SY, Liu BL, Wang BZ, Huang MC, Chen LH, Chao C, "GaAs-InP heteroepitaxy and GaAs-InP MESFET fabrication by MOVPE", J. Crys. Growth 170, 433 (1997).
  • Wang BZ and Chua SJ, "A self-organised method for fabricating highly strained quantum wires and quantum wire laser". US Patent No.: 6696372

Last updated on : 04 Sep 2017 06:14 PM