Personal Details

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Mr. WANG Weide

Senior Specialist III


Nanofabrication (NFB) Department


2 Fusionopolis Way Innovis, #08-03, Singapore 138634

Research Details

  • Microelectronic materials, processes & devices
  • Micro- & nano-fabrication
  • Extensive experience in Semiconductor Process and Equipment.
  • Thin film technology, Rapid Themal processing, PECVD, High Temp annealing etc.
    • NiSi Silicide for Sub-0.1 Micron CMOS
    • Developing new germanosilicide/germanide materials and processes for future Nano-scale mosfet device
    • Dielectric-based Hard Masks for III-V Material Etching
    • Optical Metamaterials and their Applications in Super Resolved Microscopic Imaging
    • Fabrication and Characterization of Spectra Selective Films
    • GaN-on-Silicon High Voltage Electronics
    • New Absorber Material Selection
    • Optoelectronic integration using GaAs and GaN process technologies


    • 1998 - Current
    Senior Research Officer, IMRE
    • 1995 - 1998
    Application Engineer, ESI, Singapore
    • 1982 - 1995
    Engineer, Senior Engineer, Huajing Electronics Group Corporation, China
    • MSc. (EE) National University of Singapore
    • B.Sc. in Physics, Fudan University, 1982

    Member, the Materials Research Society of Singapore
    • Chen, XT; Gui, D; Chi, DZ; Wang, WD; et al. “Study of Ta-barrier and pore sealing dielectric layer interaction for enhanced barrier performance of Cu/ultralow kappa (kappa < 2.2) interconnects”, IEEE ELECTRON DEVICE LETTERS, Volume: 26, Issue: 9, Pages: 616-618      

    • R. T. P. Lee, S. L. Liew, W. D. Wang, E. K. C. Chua, S. Y. Chow, M. Y. Lai, and D. Z. Chi "Fully Silicided Ni1-xPtxSi Metal Gate Electrode for p-MOSFETs", Electrochemical and Solid-State Letters, 8 (7) G156-G159

    • W.D. Wang, D.Z. Chi,* J. Liu, L. Wang, and S. J. Chua, D. W. Gidley "Surface pore-sealing in porous MSQ low-k film using NH3 plasma treatment" MRS Spring Meeting 2005, March 28-April 1, 2005, San Francisco, CA, USA

    • Liu J, Loh KP, Lin M, Foo YL, Wang WD, Chi DZ "Plasma deposition of low dielectric constant (k=2.2 similar to 2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films", Journal of Applied Physics, 96 (11): 6679-6684

    • Yu HY, Lim HF, Chen JH, Li MF, Zhu CX, Tung CH, Du AY, Wang WD, Chi DZ, and Kwong DL "Physical and electrical characteristics of HfN gate electrode for advanced MOS devices", IEEE ELECTRON DEVICE LETTERS 24 (4): 230-232 

    • D. Z. Chi, W. D. Wang, S. J. Chua and S. Ashok, "Reverse Current Transport Mechanism in Shallow Junctions Containing Silicide Spikes", Journal of Applied Physics, VOLUME 92, pp.7532-7535 NUMBER 12

    • D. Ma, W. D. Wang, and S. K. Lahiri, "Scallop formation and dissolution of Cu-Sn intermetallic compound during solder reflow", Journal of Applied Physics, VOLUME 91, pp.3312-3317, NUMBER 5

    Last updated on : 03 Aug 2018 02:36 PM