Personal Details

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Dr. CHI Dongzhi

Principal Scientist I/Senior Research Councillor, Strategic Research Office


Electronic Materials (ELE) Department


2 Fusionopolis Way. Innovis, #08-03, Singapore 138634.

Research Details

  • Electronic materials for semiconductor device applications: silicides, germanides, high-k dielectrics, and their integration into novel nano-CMOS devices including FinFETs, Schottky S/D Ge FETs
  • Functional inorganic compounds for PV and solar water splitting applications: semiconducting silicide/sulphides/oxides for PV; TiO2, Fe2O3, Co:P, and Ni:B for solar water splitting
  • Compound semiconductors for electronic applications: (1) heterogeneous integration of III-V semiconductors on Si/Ge platform for high mobility channel FETs and (2) GaN power electronic devices
  • Solid–state reaction in metal–semiconductor systems and thermodynamic/kinetic processes in thin films
  • Metal alloys and compounds – structure-property relationship
  • Electronic & semiconductor materials, devices, & process
  • Thin film technology.
  • Analytical expertise (structural & electrical characterization).

Projects as PI and Co-PI in last 5 years

  • PI of A-Car Consortium Program project “Gallium Nitride Power Devices for Automotive Applications” phase II, Jun 2012 – Dec 2014
  • Co-PI of A-Star SERC project, “Heterogeneous Integration of GaAs on Si/Ge platform for various application”, Jan 2010 – Jan 2013
  • PI of IMRE core project, “Semiconducting -FeSi2 for the Application to Thin Film Solar Cells”, May 2009 – Apr 2011 PI of 3 IMRE projects in “Electronic Packaging Research Consortium 9 (EPRC 9)”, Dec 07 - Jun 09
  • PI of A-STAR Thematic Strategic Research Programme (TSRP) on Nanoelectronics – the next wave, “Developing New Germanosilicide/Germanide Materials and Processes for Future Nano-scale MOSFET Devices”, 1 Oct 04 – 30 Mar 2008
  • 98-present
Scientist (98-02)/ Senior Scientist I-III (02-Mar13)/ Principal Scientist (since Apr13)/ Head (since Apr 09), Institute of Materials Research & Engineering
  • 94-98
Research Assistant, EMPRL, The Pennsylvania State University
  • 90-91
Visiting Researcher, The James Franck Institute, University of Chicago
  • 87-92
Research Associate, Shanghai Institute of Ceramics, Chinese Academy of Science
  • PhD, The Pennsylvania State University, USA, 1998
  • MS, Shanghai Institute of Ceramics, Chinese Academy of Science, CHINA, 1987
  • BS, Jilin University, CHINA, 1984

  • Member, Material Research Society (1995-present)
  • Member of scientific programme committee of Symposium H, ICMAT 2005
  • Member of program committee, The 6th International Workshop on Junction Technology (IWJT-2006)
  • Session chair: MRS Spring Meeting 2007, San Francisco, USA, April 9-13, 2007
  • Session chair: IUMRS-ICEM2010 (International Union of Materials Research Societies – International Conference on Electronic Materials 2010), Seoul, Korea, August 22 -27, 2010
  • Session chair: ICGSC11 - 2nd International Conference on Green & Sustainable Chemistry, Nov. 14 – 16, 2011
  • Reviewer for international journals such as Applied Physics Letters, Journal of Applied Physics, Electrochemical and Solid State Letters, Journal of the Electrochemical Society, Surface Science, Thin solid films, and IEEE Electronic Packaging in numerous times
  • “Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics”, RM Yu, L Dong, CF Pan, SM Niu, HF Liu, HF, W Liu, SJ Chua, DZ Chi, and ZL Wang, Advanced Materials 24, Pages: 3532-3537 (2012) _ Impact factor: 13.877
  • “Layer-by-layer oxidation of InN(0001) thin films into body-center cubic In2O3(111) by cycle rapid thermal annealing”, HF Liu, HF, DZ Chi, and W Liu, CRYSTENGCOMM 14, Pages: 7140-7144 (2012) _ Impact factor: 3.842
  • “Tapered and aperiodic silicon nanostructures with very low reflectance for solar hydrogen evolution”, SH Tan, CB Soh, W Wang, SJ Chua, and DZ Chi, Applied Physics Letters 101 , Article Number: 133906 (2012) _ Impact factor: 3.554
  • “Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser”, PSY Lim, DZ Chi, XC Wang, and YC Yeo, Applied Physics Letters 101, Article Number: 172103 (2012) _ Impact factor: 3.554
  • “Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications”, HF Liu, CC Tan, GK Dalapati, and DZ Chi, JOURNAL OF APPLIED PHYSICS 112, Article Number: 063114 (2012) _ Impact factor: 2.072
  • “Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment”, PSY Lim, PSY, DZ Chi, PC Lim, and YC Yeo, JOURNAL OF APPLIED PHYSICS 111, Article Number: 073705 (2012) _ Impact factor: 2.072
  • “Fabricating high-quality GaN-based nanobelts by strain-controlled cracking of thin solid films for application in piezotronics”, H.F. Liu, W. Liu, S.J. Chua, and D.Z. Chi, Nano Energy 1, 316–321 (2012) (the paper was also highlighted in “Compound Semiconductors” January Issue 2012)
  • “Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications”, C. Mahata, S. Mallik, T. Das, C. K. Maiti, G. K. Dalapati, C. C. Tan, C. K. Chia, H. Gao, M. K. Kumar, S. Y. Chiam, H. R. Tan, H. L. Seng, D. Z. Chi, and E. Miranda, Applied Physics Letters 100, 062905 (2012) _ Impact factor: 3.554
  • “Sputter-Deposited La2O3 on p-GaAs for Gate Dielectric Applications”, T. Das, C. Mahata, Maiti CK, GK Dalapati, Chia CK, Chi DZ, Chiam SY, Seng HL, Tan CC Hui HK, ; Sutradhar G, Bose PK, JOURNAL OF THE ELECTROCHEMICAL SOCIETY 159, G15-G22 ( 2012)_ Impact factor:2.241
  • “Improvement in Photovoltaic Performance of Thin Film beta-FeSi(2)/Si Heterojunction Solar Cells with Al Interlayer”, Liew, SL; Chai, Y; Tan, HR; Hui, HK; Wong, ASW; Dalapati, GK ; Chi, DZ, JOURNAL OF THE ELECTROCHEMICAL SOCIETY 159, H52-H56 (2012) _ Impact factor:2.241
  • “Magnetron-sputter epitaxy of beta-FeSi2(220)/Si(111) and beta-FeSi2(431)/Si(001) thin films at elevated temperatures”, HF Liu, CC Tan, and DZ Chi, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 30, Article Number: 041516 (2012) _ Impact factor:1.253
  • “Magnetron-sputter deposition of Fe3S4 thin films and their conversion into pyrite (FeS2) by thermal sulfurization for photovoltaic”, HF Liu and DZ Chi, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 30, Article Number: 04D102 (2012) _ Impact factor:1.253
  • “Effects of doping and indium inclusions on the structural and optical properties of InN thin films grown by MOCVD”, HF Liu, W Liu, W, SB Dolmanan, S Tripathy, SJ Chua, and DZ Chi, JOURNAL OF PHYSICS D-APPLIED PHYSICS 45, Article Number: 195102 (2012) _ Impact factor:2.544
  • “Effects of temperature and LT-ZnO template on structural and optical properties of thermal-evaporation deposited ZnO submicron crystals”, HF Liu, SJ Chua, and DZ Chi, MATERIALS LETTERS 72, Pages: 71-73 (2012) _ Impact factor:2.307
  • “Effect of Al incorporation on the crystallization kinetics of amorphous FeSi2 into poly beta-FeSi2 film on SiO2/Si(100) substrate”, D Tan, CT Chua, GK Dalapati, and DZ Chi, Thin Solid Films 520, Pages: 2336-2338 (2012) _ Impact factor:1.890
  • “Impact of Packaging Design on Reliability of Large Die Cu/low-kappa (BD) Interconnect”, TC Chai, XW Zhang, HY Li, VN Sekhar, OKN Khan, John Lau, R Murthy, YM Tan, CK Cheng, SL Liew, and DZ Chi, IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY 2, Pages: 807-816 (2012) _ Impact factor:0.977
  • “Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers”, S. Mallik, C. Mukherjee, C. Mahata, M. K. Hota, T. Das, G. K. Dalapati, H. Gao Gao, M. K. Kumar, DZ Chi, C. K. Sarkar, and C. K. Maiti, Thin Solid films 522, Pages: 267-273 (NOV 1 2012) _ Impact factor:1.890
  • “High quality Ge epitaxy on GaAs (100) grown by metal-organic chemical vapor deposition”, YB Cheng, CK Chia, Y Chai, and DZ Chi, Thin Solid films 522, Pages: 267-273 (NOV 1 2012) _ Impact factor:1.890
  • “Probing the growth of b-FeSi2 nanoparticles for photovoltaic applications: a combined imaging and spectroscopy study using transmission electron microscopy”, A. S. W. Wong, G. W. Ho, S. L. Liew, K. C. Chua, and D. Z. Chi, PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS 19, 464–472 (2011)_ Impact factor: 6.407
  • “Effect of oxygen evolution catalysts on hematite nanorods for solar water oxidation”, Hong, YR; Liu, ZL; Al-Bukhari, SFBSA; Lee, CJJ; Yung, DL; Chi, DZ; Hor, TSA, CHEMICAL COMMUNICATIONS 47, 10653-10655 (2011) _ Impact factor: 5.787
  • “Photovoltaic characteristics of p--FeSi2(Al) /n-Si(100) heterojunction solar cells and the effects of interfacial engineering”, G. K. Dalapati, S. L. Liew, A. S. W. Wong, Y. Chai, S. Y. Chiam, and D. Z. Chi, Applied Physics Letters 98, 013507 (Jan 2011) _ Impact factor:3.554
  • “Fabrication of a TiNx/Ni/Au Contact on ZnO Films With High Thermal Stability and Low Resistance”, J. W. Chai, M. Yang, D. Z. Chi, June L. T. Ong, S. J. Wang, Z. Zhang, J. S. Pan, Y. P. Feng, and S. J. Chua, IEEE TRANSACTIONS ON ELECTRON DEVICES 58, 4297-4300 (2011)_ Impact factor: 2.267
  • “Anomalous temperature-dependency of phonon line widths probed by Raman scattering from beta-FeSi(2) thin films”, Liu, HF; Huang, A; Chi, DZ, JOURNAL OF APPLIED PHYSICS 109, Article Number: 083538 (2011) _ Impact factor: 2.072
  • “Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm”, H. F. Liu, W. Liu, A. M. Yong, X. H. Zhang, S. J. Chua, and D. Z. Chi, JOURNAL OF APPLIED PHYSICS 110, 063505 (2011) _ Impact factor: 2.072
  • “Low-Rate Sputter-Deposited Fe(3)Si Thin Films on Si Substrates: Structural and Ferromagnetic Properties”, Liew, SL; Seng, DHL; Tan, HR; Chi, DZ, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 11, 2687-2690 (2011) _ Impact factor: 1.563
  • “Surface Passivation of GaAs Substrates with SiO(2) Deposited Using ALD”, Dalapati, GK; Chia, CK; Mahata, C; Das, T; Maiti, CK; Kumar, MK; Gao, H; Chiam, SY; Tan, CC; Chua, CT; Cheng, YB; Chi, DZ, ELECTROCHEMICAL AND SOLID STATE LETTERS 14, G52-G55 (2011) _Impact factor: 1.837
  • “Role of Al(x)Ga(1-x)As buffer layer in heterogeneous integration of GaAs/Ge”, Chia, CK; Dalapati, GK; Chai, Y; Lu, SL; He, W; Dong, JR; Seng, DHL; Hui, HK; Wong, ASW; Lau, AJY; Cheng, YB; Chi, DZ; Zhu, Z; Yeo, YC; Xu, Z; Yoon, SF, JOURNAL OF APPLIED PHYSICS 109,Article Number: 066106 (2011) _ Impact factor: 2.072
  • “First-principles study of NiSi(2)/HfO(2) interfaces: energetics and Schottky-barrier heights”, Wong, TI; Yang, M; Feng, YP; Chi, DZ; Wang, SJ, JOURNAL OF PHYSICS D-APPLIED PHYSICS 44, Article Number: 405302 (2011) _ Impact factor: 2.08
  • “Formation of epitaxial metastable NiGe2 thin film on Ge (100) by pulsed excimer laser anneal”, Lim PSY, Chi DZ, Lim PC, Wang XC, Chan TK, Osipowicz T, and Yeo YC, Applied Physics Letters 97, 182104 (Nov 1, 2010) _ Impact factor:3.554
  • “Understanding the Growth of beta-FeSi2 Films for Photovoltaic Applications: A Study Using Transmission Electron Microscopy”, Wong ASW, Ho GW, and Chi DZ, Journal of The Electrochemical Society 157, H847-H852 (2010) _ Impact factor:2.241
  • “Interfacial and Electrical Characterization of Atomic-Layer-Deposited HfO2 Gate Dielectric on High Mobility Epitaxial GaAs/Ge Channel Substrates”, Dalapati GK, Kumar MK, Chia CK, Gao H , Wang BZ , Wong ASW, Kumar A, Chiam SY, Pan JS, and Chi DZ, Journal of The Electrochemical Society 157, H825-H831 (2010) _ Impact factor: 2.241
  • “Thermal annealing of nanocrystalline Fe3S4 films deposited on Si substrates by dc-magnetron sputtering at room temperature”, Liu HF, Huang A, and Chi DZ, Journal of Physics D-Applied Physics 43, Art#: 455405 (Nov 17 2010) _ Impact factor:2.083
  • “Characterization of Y2O3 gate dielectric on n-GaAs substrates”, Das PS, Dalapati GK, Chi DZ, Biswas A, and Maiti CK, Applied Surface Science 256, 2245-2251 (2010) _ Impact factor: 1.616
  • “HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties”, Mallik S, Mahata C, Hota MK, Dalapati GK, Chi DZ, Sarkar CK, and Maiti CK, Microelectronic Engineering 87, 2234-2240 (Nov 2010) _ Impact factor: 1.488
  • “Thermal stability of HfOxNy gate dielectrics on p-GaAs substrates”, Das T, Mahata C, Dalapati GK, Chi DZ, Sutradhar G, Bose PK, Chia CK, Chiam SY, Pan JS, Zhang Z, and Maiti CK, Semiconductor Science and Technology 25, Issue:12, Art.# 125009 (Dec 2010) _ Impact factor:1.253

Last updated on : 04 Sep 2017 06:08 PM