Personal Details

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KE Qingqing

Scientist I


Electronic Materials (ELE) Department


2 Fusionopolis Way, Innovis, #08-03, Singapore 138634

Research Details

1. Growth of thin films and fabrication of multiferroic devices
2. Study the magnetoelectric coupling effects in multiferroic complex
3. Relaxor ferroelectric and non-volatile memories
4. Energy storage materials

1. Fabrication and characterization of ferroelectric, dielectric, magnetic, multiferroic and other functional materials at nanometer scales.


2. Understanding theoretical physics including switching kinetics, polarization relaxation, size and defect effects, charge transport mechanisms, order coupling in nanoscale complex electronic and magnetic materials.


3. Functional oxide deposition, characterization and processing for microelectronic and high-frequency smart device applications, e.g., ferroelectric memories, dynamic random access memories (DRAMs), resistive random access memories (RRAMs), etc.

4. Design and fabricate nanostructures by CVD and chemical solution techniques for energy storage.

Piezoelectric sensor and transducer

04/2016-now           Scientist I, IMRE 

02/2013-03/2016    Research Fellow, National University of Singapore

07/2012- 01/2013   Research Engineer, National University of Singapore 

Doctor of Philosophy (Ph.D.), Materials Science and Engineering
2005, National scholarship of China
2008, Scholarship of Singapore goverment

1. Qingqing Ke, Amit Kumar, Xiaojie Lou, Yuan Ping Feng, Kaiyang Zeng, Yongqing Cai and John Wang, “Microstructural evolution of charged defects in the fatigue process of polycrystalline BiFeO3 thin films”, Acta Materialia 82, 190 (2015).

2. Qingqing Ke, Chunhua Tang, Zheng-Chun Yang, Minrui Zheng, Lu Mao, Huajun Liu and John Wang, “3D Hierarchical SnO2@Ni(OH)2 core/shell nanowire arrays on carbon cloth for high energy supercapapcitance” J. Mater. Chem. A, 2015,3, 9538-9542.

3. Qingqing Ke, Xiaojie Lou, Haibo Yang, Amit Kumar, Kaiyang Zeng and John Wang, “Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO3-based thin film”, Applied Physics Letter 101, 022904 (2012).

4. Qingqing Ke, Amit Kumar, Xiaojie Lou, Kaiyang Zeng and John Wang, “Origin of the enhanced polarization in La and Mg co-substituted BiFeO3 thin film during the fatigue process”, Applied Physics Letter 100, 042902 (2012).

5. Qingqing Ke, Xiaojie Lou, Yang Wang and John Wang, “Oxygen-vacancy-related relaxation and scaling behaviors of Bi0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films”, Physical Review B 82, 024102 (2010).

1. Litong Zhang, Yongdong Xu, Laifei Cheng, Qingqing Ke and Hui Mei, “Ceramic base compound material bolt preparation method”, China Patent 200810018039.

Last updated on : 08 Sep 2017 06:27 PM