Personal Details

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Mr. Xing Zhenxiang, Richard

Senior Specialist III

Staff

Advanced Characterisation and Instrumentation (ACI) Department

67149175

xingz@imre.a-star.edu.sg

2 Fusionopolis Way, Innovis, #08-03, Singapore 138634


Research Details


Contamination characterization for Semiconductor

Implantation characterization for Semiconductor

Materials characterization for Semiconductor and Polymer Materials

Interface characterization for thin films

Failure Analysis in Semiconductor, LCD, LED, Packaging and Polymer

 

 

Secondary Ion Mass Spectrometry (TOF-SIMS and D-SIMS)

Implantation, Contamination, Interface and FA characterization

 

Auger electron spectroscopy (AES)

Bond-pad contamination, Interface Materials and FA characterization

 

X-Ray Photoelectron Spectroscopy (XPS)

Materials contamination and FA characterization

 

Total reflection X-ray fluorescence (TXRF)

Contamination characterization

 

Fourier transform infrared spectroscopy (FTIR)

Materials and FA characterization

 

Gas Chromatography Mass Spectrometry (GC-MS)

Materials and Contamination characterization

 

Thermo Gravimetric Analysis (TGA)

Materials and FA characterization

 


 

2018 - current, Senior Specialist III, IMRE, A*Star. In charge of TOF-SIMS and AES.

2014 - 2018, Senior Research Engineer III, DSI, A*Star. In charge of TOF-SIMS and AES.

2010 - 2014, Deputy Director, MTS, WinTech Nano-Technology In charge of Surface Division (TOF-SIMS, D-SIMS, XPS, FTIR and AFM).

2005 - 2010, SIMS Group Leader, Principal Engineer, GLOBALFOUNDRIES Singapore/ Chartered Semiconductor Pte Ltd. In charge of TOF-SIMS and D-SIMS group.

2000 - 2005, Research Officer, IME, A*Star. In charge of Chemical Lab (FTIR, GC-MS, TGA, DSC, TMA, DMA and TXRF)

1996 - 2000, Shift Superintendent, Singapore Polymer Corporation Pte Ltd. In charge of PVC plant production.

1986 -1996, Head of Department, Senior Engineer, Qingdao Haiwan Group Pte Ltd. In charge of chemical plant design.

 

 

2001-2003: National University of Singapore

Master's degree, Materials Science and Engineering

 

1982-1986: Nanjing University of Technology

Bachelor's degree, Chemical Engineering




  1. A Novel SIMS Analysis Method on Bulk Metallic Contamination in Incoming SOI Wafers”. Was awarded a Chartered Engineering Award (CS2006/071, 24 Aug 2006).
  2. “A Novel TOF-SIMS Analysis Method for Monitoring of Airborne B & P Contamination on Wafer Surface in Wafer Fab Clean Room”. Was awarded a Chartered Engineering Award (CS2006/107, 20 Oct 2006).
  3. “A Novel Delam-guiding Methodology (DGM) for the Accurate Layer Delamination in 4-Points Bending Test”. Was awarded a Chartered Engineering Award (CS 2009/020, 21 May 2009).
  4. “A New Failure Analysis Methodology for Identifying GOI Failure Mechanism”. Was awarded a Chartered Engineering Award (CS 2009/024, 21 May 2009).
  5. “An Accurate SIMS Analysis Methodology by using Both TOF-SIMS and Dynamic SIMS”. Was awarded a GLOBALFOUNDRIES Engineering Award on 22 April 2010.
  6. “Development of new TOF-SIMS depth profiling analysis method - improved TOF-SIMS detection limit 10 times than Ion-TOF”. Was awarded the first Innovation Award of Wintech Nano-Technology on 29th February 2012.



 Contamination characterization
  1. D. Gui, Y.N. Hua, Z.X. Xing and C.W. Tan .SIMS Analysis of Boron Cross Contamination in Al Implantation Process of Wafer Fabrication. The Proceedings of the IEEE NSM, Nov 22-24, 2005, Kuching, Sarwak, Malaysia, pp 116-119 (2005).
  2. Gui Dong, Hua Younan, Xing Zhenxiang and Zhao Siping, Study on Potassium Contamination in SOI Wafer Fabrication Using Dynamic SIMS. The Proceedings of the 13th International Physics and Failure Analysis, 03-07 July, Meritus Mandarin Hotel, Singapore, pp.133-136 (2006).
  3. D. Gui, Z.X. Xing, Z.Q. Mo, Y.N. Hua, S.P. Zhao, SIMS Analysis of Gate Oxide Breakdown due to Tungsten Contamination. The Proceedings of the 2006 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 29 Nov -01 Dec., pp477-480 (2006).
  4. Mo Zhiqiang, Gui Dong, Hua Younan, Zhao Siping, Xing Zhenxiang. Analysis of Airborne Boron and Phosphorus Contaminations on Wafer Surface by TOF-SIMS. The Proceedings of the 2006 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 29 Nov -01 Dec., pp677-679 (2006).
  5. D. Gui, Y.N. Hua, X.Z. Xing and S.P. Zhao, Investigation of Potassium Contamination in SOI Wafer Using Dynamic SIMS. IEEE Transations on Device and Materials Reliability, Vol. 7. No. 2, June, p1-4 (2007).
  6. Xing Zhenxiang, Mo Zhiqiang, Gui Dong, Huang Yanhua and Hua Younan. TOF-SIMS Analysis of Surface and Sub-Surface Metal Contamination on Wafer Surface. The proceedings of IEEE Reginald Symposium on micro electronic, 3-6, Dec, Penang, Malaysia, p277-279 (2007).
  7. Mo Zhiqiang, Xing Zhenxiang, Gui Dong, Huang Yanhua and Hua Younan. RSF Determination for Boron and Phosphorus Contaminations Analysis on Wafer Surface by TOF-SIMS. The proceedings of IEEE Reginald Symposium on micro electronic, 3-6, Dec, Penang, Malaysia, p287-289 (2007).
  8. D. Gui, J.J. Shao, M. Hao, Z.X. Xing, H.S. Lee, Y.Q. Shen, X.M. Li. TOF SIMS Analysis of Organic Out-gassing from Wafer Boxes Adsorbed on Wafers. The Proceedings from the 19th International Conference on Secondary Ion Mass Spectrometry – SIMS 19. 29th September to 4th October 2013. Island of Jeju, Korea.

 

Implantation characterization

  1. D. Gui, Z.X. Xing, Z.Q. Mo, Y.N. Hua, S.P. Zhao, Evaluation of Stopping Power of Photo-resist to Ion Implantation by Using SIMS. The Proceedings of the 2006 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 29 Nov -01 Dec., pp481-484 (2006).
  2. D. Gui,*, Z.X. Xing, Y.H. Huang, Z.Q. Mo, Y.N. Hua, S.P. Zhao and L.Z. Cha . Long-term Reproducibility of Relative Sensitivity Factors Obtained with CAMECA Wf. The proceedings of the 16th International Conference on Secondary Ion Mass Spectrometry, 29 Oct-02 Nov 2007, Kanazawa, Japan, p335 (2007).
  3. D. Gui,*, Z.X. Xing, Y.H. Huang, Z.Q. Moa, Y.N. Hua, S.P. Zhao and L.Z. Cha. Effect of Oxygen Flooding on Roughness Development in the depth profiling with 500eV O2+ Beam. The proceedings of the 16th International Conference on Secondary Ion Mass Spectrometry, 29 Oct-02 Nov 2007, Kanazawa, Japan, p337 (2007).
  4. D. Gui,*, Z.Q. Mo, Z.X. Xing, Y.H. Huang, Y.N. Hua, S.P. Zhao and L.Z. Cha. Long-term Reproducibility of Relative Sensitivity Factors Obtained with CAMECA Wf. Applied Surface Science 255, p1427-1429 (2008)
  5. Huang Yanhua, Xing Zhen Xiang, Hua Younan & L. Z Cha, SIMS Analysis of Low dose As implantation in SiGe. The Proceedings of the International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions at Seikei University (SISS-12), 10-11 June 2010, Japan, p67-70 (2010).

 

Materials characterization

  1. Mo Zhiqiang, Ramesh Rao, Xing Zhenxiang, Gui Dong and Hua Younan. Reproducibility of N Concentration Measurement in SiON: Comparison of XPS, Auger, D-SIMS and TOF-SIMS. The proceedings of IEEE Reginald Symposium on micro electronic, 3-6, Dec, Penang, Malaysia, p290-293 (2007).
  2. D. Gui,*, Z.Q. Mo, Z.X. Xing, Y.H. Huang, Y.N. Hua, S.P. Zhao and L.Z. Cha. Roughness Development in the Depth Profiling with 500eV O2+ beam with the Combination of Oxygen Flooding and Sample Rotation. Applied Surface Science 255, p1433-1436 (2008).
  3. Gui Dong, Huang Yanhua, Rao Rasmesh, Xing Zhen Xiang, Mo Zhiqiang and Hua Younan. Numerical Approach to resolve mass interference in depth profiling As in SiGe. Surface and Interface Analysis, in press (2009).
  4. MacDonald, B.J.; Zhenxiang Xing ; Chao Fu ; Xiaomin Li , *Philip LEE. Surface Materials Analysis of Defect Ring on Image Sensor. The Proceedings from the IEEE 13th Electronics Packaging Technology Conference (EPTC 2011). 7 - 9 December 2011, Shangri-La Hotel Singapore, Singapore. P691 – 694 (2011).
  5. Lee, H.S. ; Xing, Z.X. ; Gui, D. ; Hao, M. ; Shao, J.J. ; Khoo, B.S. ; Shen, Y.Q. ; Li, X.M. Composition distribution studies of Sn/Ag/Cu solder material using TOF-SIMS, XPS and EDX. The Proceedings from the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2013), 15-19 July 2013, Shangri-La Hotel, Suzhou, China. P158 – 161 (2013).

 

Interface characterization

  1. D. Gui, Y.N. Hua, Z.X. Xing and C.W. Tan, SIMS Characterization of Ultra-thin Nitrided Gate Oxide in Wafer Fabrication. The Proceedings of the IEEE NSM, Nov 22-24, 2005, Kuching, Sarwak, Malaysia, pp 120-123 (2005).
  2. D. Gui,*, Z.Q. Mo, Z.X. Xing, Y.H. Huang, Y.N. Hua, S.P. Zhao and L.Z. Cha .Depth Profiling of Ultra-thin Oxynitride Gate dielectrics by Using MCs2+ Technique. The proceedings of the 16th International Conference on Secondary Ion Mass Spectrometry, 29 Oct-02 Nov 2007, Kanazawa, Japan, p117 (2007).
  3. D. Gui, Z.Q. Mo, Z.X. Xing, Y.H. Huang, Y.N. Hua, S.P. Zhao and L.Z. Cha. Depth Profiling of Ultra-thin Oxynitride by Multiple Techniques. The proceedings of the 16th International Conference on Secondary Ion Mass Spectrometry, 29 Oct-02 Nov 2007, Kanazawa, Japan, p338 (2007).
  4. D. Gui,*, Z.Q. Mo, Z.X. Xing, Y.H. Huang, Y.N. Hua, S.P. Zhao and L.Z. Cha. Depth Profiling of Ultra-thin Oxynitride Gate dielectrics by Using MCs2+ Technique. Applied Surface Science 255, p1437-1439 (2008)
  5. Z. Q. Mo, Z. X. Xing, H. W. Cheng, D. Gui, Y. H. Huang, Y. N. Hua, Jennifer Teong, Impact of Plasma Treatment Characterization on Ultra Low-k Film using TOF-SIMS, The Proceedings of the 4th Chinese Conference Secondary Ion Mass Spectrometry 2008 Beijing International Symposium on Secondary Ion Mass. Oct 26-29, China University of Mining & Technology Beijing, P. R. China, p40 (2008).
  6. J. Widodo*, Z. X. Xing^, Z. Q. Mo^, T. Ouyang*, D. Gui^, Y. Hua^, H. Liu*, W. Lu*, Interfacial Characterization of ultra low- k film (kappa=2.55) with Time of Flight Secondary Ion Mass Spectrometry (TOFSIMS). The Proceedings of the 15th International Symposium for on the Physical & Failure Analysis of Integrated Circuits (IPFA 2008), July 7-11, Grand Copthorne Waterfront Hotel, Singapore, p304-307 (2008).

 

Failure Analysis

  1. D. Gui, Y.H. Huang, Z.X. Xing, Z.Q. Mo and Y.N. Hua. Study on Multiple E-test failure Caused by Phosphorus Contamination in Undoped Silicate Glass Using Dynamic SIMS. The proceedings of IEEE Reginald Symposium on micro electronic, 3-6, Dec, Penang, Malaysia, p273-276 (2007).
  2. Huang Yanhua, Gui Dong, Eng Choon Siong, Xing Zhenxiang, Mo Zhiqiang, Hua Younan and Jennifer Teong, Case study of Front-End-of-Line Failure Caused by Implantation Masking Error. The Proceedings of the 4th Chinese Conference Secondary Ion Mass Spectrometry 2008 Beijing International Symposium on Secondary Ion Mass. Oct 26-29, China University of Mining & Technology Beijing, P. R. China, p39 (2008).
  3. Gui Dong, Huang Yanhua, Xing Zhenxiang, Mo Zhiqiang and Hua Younan. Gate Oxide Integrity Failure Caused by Molybdenum Contamination Introduced in the Ion Implantation. The Proceedings of the 15th International Symposium for on the Physical & Failure Analysis of Integrated Circuits (IPFA 2008), July 7-11, Grand Copthorne Waterfront Hotel, Singapore, p283-286 (2008).
  4. Hua Younan, Chu Susan, Gui Dong, Mo Zhiqiang, Xing Zhenxiang, Liu Binghai, Ng Adrian and Tsai Tony. A New Failure Analysis Flow of Gate Oxide Integrity Failure In Wafer Fabrication. The Proceedings of the 35th International Symposium for Testing and Failure Analysis (ISTFA 2009), Nov 15-19, San Jose, California, USA p177-181 (2009).
  5. C.Q. Chen, G.B. Ang, Z.X. Xing, Y.N. Hua, Z.Q. Mo, RAO. Ramesh, Y. Li, Non-visible defect analysis of OTP device. The Proceedings of the 37th International Symposium for Testing and Failure Analysis (ISTFA 2011), Nov 13-17 in San Jose, California, USA, p198-201 (2011).
  6. D. Gui, J.J. Shao, M. Hao, Z.X. Xing, H.S. Lee, Y.Q. Shen, X.M. Li. TOF SIMS Analysis of Organic Out-gassing from Wafer Boxes Adsorbed on Wafers. The Proceedings from the 19th International Conference on Secondary Ion Mass Spectrometry – SIMS 19. 29th September to 4th October 2013. Island of Jeju, Korea.



Last updated on : 05 Apr 2019 06:38 PM