Personal Details

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Dr. LIM Sze Ter

Scientist III/Deputy Dept Head


Electronic Materials (ELE) Department


2 Fusionopolis Way, Innovis, #08-03, Singapore 138634

Research Details

  • Magnetic materials/devices fabrications and characterizations
  • Functional spintonic materials for applications
  • Spin orbit and spin transfer torque applications
  • Magnetic memory technology for AI and neuromorphic applications

Magnetism, magnetic materials and spintronics, with emphasis on thin film fabrication, sputtering and characterization, magnetic, structural and chemical analysis, ferromagnetic resonance technique, spin orbit and transfer torque MRAM device testing and characterizations.

  • Pharos Programme on Investigating Spin Topology for Next-Generation Memory Technologies
  • Pharos Programme on Topological Insulator
  • Half Metals with Perpendicular Magnetic Anisotropy for Advanced Memory
  • Electric Field Effect on Interfacial Magnetic Anisotropy in Magnetic Devices
  • Investigation of the origin of magnetic anisotropy in magnetic materials
  • Industrial Alignment Project on Micron/DSI Joint STT-MRAM Development

Jun 2018 - present Scientist/Deputy Head, Electronic Materials Department, Institute of Materials Research and Engineering (IMRE), A*STAR, Singapore

Dec 2011 - May 2018 Scientist/Covering Division Manager/Program leader/Deputy Risk Officer/HSE Chairman, Non-Volatile Memory Division, Data Storage Institute (DSI), A*STAR, Singapore

Jul 2006 - Aug 2007 Research Officer, Spintronic, Media and Interface Division, Data Storage Institute (DSI), A*STAR, Singapore

2012 - PhD Engineering, National University of Singapore (NUS)

2006 - B. Engineering, National University of Singapore (NUS)

2017 Project Management Professional Certification, Project Management Institute

2014 DSI Special Recognition Award, Data Storage Institute (DSI), A*STAR, Singapore

2011 Best Poster Award, Poster Competition, IEEE Magnetics Society Singapore Chapter

2010 Best Poster Presentation Award for DSI Graduating RS Poster, Data Storage Institute (DSI), A*STAR, Singapore

2008 Best Oral Paper Award, IUMRS-ICEM, Materials Research Society

2007 - 2011 A*STAR Graduate Scholarship Award, A*STAR, Singapore

2003 - 2006 Dean’s List Award, Electrical and Computer Engineering, National University of Singapore (NUS), Singapore

James Lourembam, Bingjin Chen, Aihong Huang, Salauddeen Allauddin, Sze Ter Lim, “A non-collinear double MgO based perpendicular magnetic tunnel junction”, Applied Physics Letters 113, 2, 022403 (2018).

Lisen Huang, Shikun He, Qi Jia Yap, Sze Ter Lim, “Engineering magnetic heterostructures to obtain large spin Hall efficiency for spin-orbit torque devices”, Applied Physics Letters 113, 2, 022402 (2018).

James Lourembam, Jiancheng Huang, Sze Ter Lim, Ernult Franck Gerard, “Role of CoFeB thickness in electric field controlled sub-100 nm sized magnetic tunnel junctions”, AIP Advances 8, 5, 055915 (2018).

Wen-Ya Wu, Weng Weei Tjiu, Wei Wan, Hui Ru Tan, Siew Lang Teo, Shifeng Guo, Sze Ter Lim, Ming Lin, “”, CrystEngComm 20, 2916-2922 (2018).

Atsushi Okada, Shikun He, Bo Gu, Shun Kanai, Anjan Soumyanarayanan, Sze Ter Lim, Michael Tran, Michiyasu Mori, Sadamichi Maekawa, Fumihiro Matsukura, Hideo Ohno, Christos Panagopoulos, “Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy”, Proceedings of the National Academy of Sciences 114, 3815-3820 (2017).

Herng Yau Yoong, Han Wang, Juanxiu Xiao, Rui Guo, Ping Yang, Yi Yang, Sze Ter Lim, John Wang, T Venkatesan, Jingsheng Chen, “Tunneling electroresistance effect in ultrathin BiFeO3-based ferroelectric tunneling junctions”, Applied Physics Letters 109, 242901 (2016).

Yi Liu, Jinjun Qiu, Sze Ter Lim, Suey Li Toh, Zhengyong Zhu, Guchang Han, Kaigui Zhu, “Strong perpendicular magnetic anisotropy in [Co/Pt]n ultrathin superlattices”, Applied Physics Express 10, 013005 (2016).

Jiancheng Huang, Michael Tran, Sze Ter Lim, Aihong Huang, Chuyi Yang, Qi Jia Yap, Guchang Han, “Determination of the electric field induced anisotropy change in sub-100 nm perpendicularly magnetized devices”, AIP Advances 6, 055805 (2016).

Jiancheng Huang, Cheow Hin Sim, Vinayak Bharat Naik, Michael Tran, Sze Ter Lim, Aihong Huang, Qi Jia Yap, Guchang Han, “Electric field effect on a double MgO CoFeB-based free layer”, Journal of Magnetism and Magnetic Materials 401, 1150-1154 (2016).

BingJin Chen, Sze Ter Lim, Michael Tran, “Magnetization switching of a thin ferromagnetic layer by spin-orbit torques”, IEEE Magnetics Letters 7, 1-5 (2016).

Chee Ying Khoo, Pooi See Lee, Sze Ter Lim, Chee Lip Gan, “Electronic Materials Research in Singapore”, 50 Years of Materials Science in Singapore (pp. 197-223), World Scientific (2016).

Magnetoresistance device and method of forming the same, Singapore Patent Publication number WO2016122402 A1, 6 Aug 2016.

Last updated on : 08 Apr 2019 09:35 AM