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Dr. James LOUREMBAM

Scientist II

Staff

Electronic Materials (ELE) Department

63194930 (Office): 6319 4747 (Lab)

James_Lourembam@imre.a-star.edu.sg

2 Fusionopolis Way, Innovis, #08-03, Singapore 138634


Research Details


  1. Development of individual and array Magnetic Tunnel Junctions

  2. Spintronics with new materials and device concepts

  3. New mechanisms of magnetization switching

  4. Novel Field Effect Transistors

  5. Complex conductivity dynamics

  6. Control of electronic phase transitions

  7. Ferromagnetic resonance of new systems and microwave applications.

300 mm wafer fab line, device characterization, transport measurements, electrical instrumentation, PVD thin film deposition, magnetic measurements (magnetometry and FMR), device layout design, structural characterization, nanofabrication,Terahertz spectroscopy, data analysis with python.

Spin-Orbit Technologies for Intelligence at the Edge (SpOT-LITE), SERC SSF

Investigating Spin Topology (Skyrmions), SERC Pharos

 June 2018 - Present           Scientist, A*STAR Institute of Materials Research and Engineering              

 August 2015 - May 2018    Scientist, A*STAR Data Storage Institute

 2011 - 2015 Ph.D - Physics, "Control and Investigation of Metal-Insulator Transitions in Novel Oxides by Light and Electric Field", Nanyang Technological University, Singapore 

2005 – 2010 Integrated MTech - Engineering Physics, Indian Institute of Technology-Banaras Hindu University, Varanasi

  1. APS Ovshinsky Travel Award U.S.A.,2015

  2. Second prize in OCPA-APS Outstanding Conference Poster Award Singapore, 2014

  3. Reviewer Credit Award for AIP Advances Journal U.S.A.,2013

J. Lourembam, A. Ghosh, M. Zeng, S. K. Wong, Q. J. Yap, S. T. Lim (2018) “Thickness-dependent perpendicular magnetic anisotropy and Gilbert damping in Hf/Co20Fe60B20/MgO heterostructures” Phys. Rev. Appl. 10, 044057

J. Lourembam, B. Chen, A. Huang, S. Allauddin, S. T. Lim (2018) “A non-collinear double MgO based perpendicular magnetic tunnel junction” Appl. Phys. Lett. 113, 022403

J. Lourembam, J. Huang, S. T. Lim, E. F. Gerard (2017) "Role of CoFeB thickness in electric field controlled sub-100 nm sized magnetic tunnel junctions" AIP Adv. 8, 055915

J. Lourembam, A. Srivastava, C. La-o-vorakiat, L. Cheng, T. Venkatesan, E. E. M. Chia (2016) “Evidence for Photoinduced Insulator-to-Metal transition in B-phase vanadium dioxide” Sci. Rep. 6, 25538

 J. Lourembam, A. Srivastava, C. La-o-vorakiat, H. Rotella, T.Venkatesan, E. E. M. Chia (2015) "New Insights into the Diverse Electronic Phases of a Novel Vanadium Dioxide Polymorph: A Terahertz Spectroscopy Study" Sci. Rep. 5, 9182

J. Lourembam, J. Ding, A. Bera, W. Lin, T.Wu (2014)” Asymmetric electroresistance of cluster glass state in manganites” Appl. Phys. Lett. 104, 133508

J. Lourembam, J. Wu, J. Ding, W. Lin, and T. Wu (2014) "Electric field tuning of phase separation in manganite thin films" Phys. Rev. B 89, 014425

corresponding author in underline


Last updated on : 03 Apr 2019 06:29 PM