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Dr. GOH Kuan Eng, Johnson (Adjunct @ NUS, Physics)

Senior Scientist II / Research Councillor, Strategic Research Office


IMRE staff with Adjunct Appointment in University/Industry, Advanced Characterisation and Instrumentation (ACI) Department


2 Fusionopolis Way Innovis, #08-03, Singapore 138634

Research Details

  • Quantum Computation & Information
  • Valleytronics
  • 2D materials
  • Quantum effect devices
  • Nanofabrication
  • Molecular Beam Epitaxy
  • Delta-doping
  • Scanning Probe Microscopy, 
  • Ballistic Electron Emission Microscopy 
  • Electronic Transport

2017 – 2020

: Spin-valley Qubits

2016 – 2020

: 2D Valleytronics

2013 – 2014

: Project leader: 3D Printed-e – Development of materials technology for 3D printable electronics

2011 – 2014

: Local Project Coordinator (Singapore) for AtMol Project – International collaboration with 10 European laboratories to develop the single molecule chip

2011 – 2014

: Principal Investigator of Atom Technology Project

2011 – 2012

: Project Leader: Bridging the industry gap – Charge injection and leakage beyond the 20 nm node

2009 – 2011

: Project Leader: Atomic Precision Manufacturing – collaboration with Zyvex Labs (US, Asia) to develop atomic precision manufacturing

2009 – 2011

: Co-project Leader: Nanoelectronics – Reliability of photovoltaic devices

2007 – 2012


: Principal developer of the spectra analysis software AGSA

Key appointments

2018 – 2020

2018 – ~

2018 – ~

2016 – 2017

: Career Development Mentor

: Research Councillor

: Senior Scientist II

: Head of Department, Materials Processing and Characterization

2016 – ~

: Programme Manager of SERC funded Pharos “Ubiquituous Electronics: The Case for Semiconductor 2D Materials” Programme

2014 – 2016

: Head of SERC Nano-Fabrication, Processing and Characterization (SnFPC)

2013 – ~

: Scientist III

2012 – 2014

: Deputy Head of Materials Analysis and Characterization


: Scientist II

2006 – ~

: Scientist I/Research Engineer: Developed material interface analysis by ballistic electron emission microscopy (BEEM) and studied high-K dielectric reliability



2015 – ~

: SERC Shared Facilities Taskforce Member

2015 – ~

: SERC Quantum Technologies Workgroup Member

2015 – ~

: SERC Defect Science Workgroup Member

2015 – ~

: Lab Manager, SnFPC Characterization and Fabrication Labs

2014 – ~

: IMRE Coordinator for Shamash Project with Applied Materials

2014 – ~

: Member of Crisis Management Committee

2014 – ~

: SnFPC ISO Management Representative

2014 – ~

: Member of IMRE F2 Relocation Taskforce (Main), Sub-Taskforces (Tower B and C)

2014 – ~

: Member of IMRE Management Committee

2014 – ~

: Organizing Chair for Advanced Materials Technology Track, Molecular Materials Meeting (M3) @ Singapore 2014

2013 – 2014

: Member of IMRE Space Committee

2013 – ~

: Member of IMRE Enterprise Risk Management Committee


: Member of IMRE Finance & Procurement Taskforce

2013 – ~

: Chair/Co-chair of IMRE Asset Management Committee


: Session chair for Asian Chemical Congress 2013

2012 – ~

: Chair (alternate) of Tender Evaluation Committee


: A*STAR SERC Job Description Taskforce member.


: National Junior Robotics Competition (Judge)

2011 – 2015

: Session chair for Molecular Materials Meeting (M3) @ Singapore


: Organizer for AtMol Workshop on Interconnection Machines in IMRE


: Organizing chair and camp lead for Asia Nano Camp 2010

2010 – 2013

: Organizing chair and session chair for SingSPM 2010, 2013


: Cert. QMR Skills Training Course for ISO Management Representative, SGS Academy


: Cert. for Towards Managing a Research Group, Postdoc Development Centre, Imperial College London


: Cert. for Leadership Fundamentals, Centre for Creative Leadership and A*STAR


: Cert. Planning & Managing Projects, ESI International


: Cert. of Leadership with Mentoring, Singapore National Employers Federation


: PhD (Physics), University of New South Wales, Australia.


: MSc (Systems, Control & IT) with Distinction, University of Sheffield, United Kingdom


: Postgraduate Diploma in Education with Distinction, National Institute of Education, Singapore


: BSc (Physics) with First Class Honours, Victoria University of Wellington, New Zealand


: Best Poster Award. Molecular Materials Meeting (M3) @ Singapore


: WMRIF Visiting Researcher Award at NIST, Gaithersburg, USA


: WMRIF Visiting Researcher Award at Institute of Physics, Chinese Academy of Sciences, Beijing, China


: WMRIF Visiting Researcher Award at National Physical Laboratory, Teddington, UK


: Honorary Mention, National Instruments ASEAN Virtual Instrumentation Applications Contest 2008


: Best Paper Award. World Materials Research Institutes Forum

2002 – 2006

: International Postgraduate Research Scholarship (UNSW, Australia)

2002 – 2005

: International Fellowship (A*STAR, Singapore)


: University Senior Scholarship (Victoria U., NZ)


: Noel Ryder Prize for Physics (Victoria U., NZ)


: J. T. Campbell Prize for Statistics (Victoria U., NZ)


: John P. Good Memorial Prize for Mathematics (Victoria U., NZ)


: PSC – Singapore Government Scholarship (Overseas)

2013 – ~

: Adjunct Assoc. Professor (Physics), National University of Singapore


  1. Nikodem Tomczak and Kuan Eng Johnson Goh, Scanning Probe Microscopy, World Scientific: Singapore, 2011.


2D Materials, Valleytronics, Spin-valley Qubits

  1. Liang Cheng, Xinbo Wang, Weifeng Yang, Jianwei Chai, Ming Yang, Mengji Chen, Yang Wu, Xiaoxuan Chen, Dongzhi Chi, Kuan Eng Johnson Goh, Jian-Xin Zhu, Handong Sun, Shijie Wang, Justin C. W. Song, Marco Battiato, Hyunsoo Yang, and Elbert E. M. Chia, “Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2”, Nature Physics,, (2019).
  2. F. Bussolotti, H. Kawai, S. L. Wong, K. E. J. Goh, “Protected hole valley states in single-layer MoS2”, Phys. Rev. B 99, 045134 (2019).
  3. J. Yang, H. Kawai, C. P. Y. Wong, K. E. J. Goh, “Electrical Doping Effect of Vacancies in Monolayer MoS2”, J. Phys. Chem. C, DOI: 10.1021/acs.jpcc.8b10496 (2019).
  4. D. Kotekar-Patil, J. Deng, S. L. Wong, C. S. Lau, K. E. J. Goh, “Single layer MoS2 nanoribbon field effect transistor”, Appl. Phys. Lett. 114, 013508 (2019).
  5. Chellappan Vijila, Ai Lin Christina Pang, Soumya Sarkar, Zi En Ooi,  Kuan Eng Johnson Goh, “Effect of Phonons on Valley Depolarization in Monolayer WSe2”, Electronic Materials Letters 14, 766 (2018).
  6. Lili Gong, Qi Zhang, Liangjun Wang, Jianfeng Wu, Cheng Han, Bo Lei, Wei Chen, Goki Eda, Kuan Eng Johnson Goh and Chorng Haur Sow, “Emergence of photoluminescence on bulk MoS2 empowered by laser thinning and gold particle decoration”, Nano Research 11, 4574 (2018).
  7. Fabio BUSSOLOTTI, Hiroyo KAWAI, Zi En OOI, Vijila CHELLAPPAN, Dickson THIAN, Ai Lin Christina PANG, and Kuan Eng Johnson GOH, “Roadmap on finding chiral valleys: screening 2D Materials for Valleytronics”, Nano Futures 2, 032001 (2018).
  8. Yee-Fun Lim, Kumar Priyadarshi, Fabio Bussolotti, Pranjal Kumar Gogoi, Xiaoyang Cui, Ming Yang, Jisheng Pan, Shi Wun Tong, Shijie Wang, Stephen J Pennycook, Kuan Eng Johnson Goh, Andrew TS Wee, Swee Liang Wong, Dongzhi Chi, “Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier”, ACS Nano 12, 1339 (2018).
  9. Weifeng Yang, Hiroyo Kawai, Michel Bosman, Baoshan Tang, Jianwei Chai, Wei Le Tay, Jing Yang, Hwee Leng Seng, Huili Zhu, Hao Gong, Hongfei Liu, Kuan Eng Johnson Goh, Shijie Wang, Dongzhi Chi, “Interlayer interactions in 2D WS2/MoS2 heterostructures monolithically grown by in situ physical vapor deposition”, Nanoscale 10, 22927 (2018).
  10. Fabio Bussolotti, Jianwei Chai, Ming Yang, Hiroyo Kawai, Zheng Zhang, Shijie Wang, Swee Liang Wong, Carlos Manzano, Yuli Huang, Dongzhi Chi and Kuan Eng Johnson Goh, “Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces”, RCS Advances 8, 7744 (2018).
  11. Belle Miaoer SOW, Junpeng LU, Hongwei LIU, Kuan Eng Johnson GOH, and Chorng Haur SOW, “Enriched Fluorescence Emission from WS2 Monoflake Empowered by Au Nanoexplorers”, Advanced Optical Materials 5, 1700156 (2017).
  12. Fabio BUSSOLOTTI, Hiroyo KAWAI, Zheng ZHANG, and Kuan Eng Johnson GOH, “A Labscale Spin and Angular Resolved Photoemission Spectroscopy Capability for 2D Valleytronics”, MRS Advances, 1-6 (2016).
  13. Calvin Pei Yu Wong, Terence Jun Hui Koek, Yanpeng Lu, Kian Ping Loh, Kuan Eng Johnson Goh, Cedric Troadec, Christian A Nijhuis, “Electronically Transparent Graphene Barriers against Unwanted Doping of Silicon”, ACS Appl. Mater. Interfaces 6, 20464 (2014).
  14. R. Thamankar, T. L. Yap, K. E. J. Goh, C. Troadec, and C. Joachim, “Low temperature nanoscale electronic transport on the MoS2 surface.”, Appl. Phys. Lett. 103, 083106 (2013).

Additive Manufacturing:

  1. Sen Wai Kwok, Kok Hin Henry Goh, Zer Dong Tan, Siew Ting Melissa Tan, Weng Weei Tjiu,Je Yeong Soh, Zheng Jie Glenn Ng, Yan Zhi Chan, Hui Kim Hui, Kuan Eng Johnson Goh, “Electrically conductive filament for 3D-printed circuits and sensors”, Applied Materials Today 9, 167 (2017).

Devices using high-K Dielectric:

  1. Y. N. Chen, Kuan Eng Johnson Goh , Xing Wu , Zin Zar Lwin , Pawan K Singh , Souvik Mahapatra , Kin Leong Pey, “Temperature-dependent Relaxation Current on Single and Dual layer Pt Metal Nanocrystal-based Al2O3/SiO2 Gate Stack”, J. Appl. Phys. 112, 094511 (2012).
  2. H. L. Qin, C. Troadec, K. E. J. Goh, K. Kakushima, H. Iwai, M. Bosman, and K. L. Pey, “Electronic properties of ultrathin high-k dielectrics studied by ballistic electron emission microscopy”, J. Vac. Sci. Technol. B 29, 052201 (2011).
  3. Y. N. Chen, K. L. Pey, K. E. J. Goh, Z. Z. Lwin, P. K. Singh and S. Mahapatra, “Study of automatic recovery on the metal nanocrystal-based Al2O3 /SiO2 gate stack”, Appl. Phys. Lett. 98, 083504 (2011).
  4. Y. N. Chen, K. L. Pey, K. E. J. Goh, Z. Z. Lwin, P. K. Singh and S. Mahapatra, “Tri-Level Resistive Switching in Metal-Nanocrystal-Based Al2O3/SiO2 Gate Stack”, IEEE Transactions on Electron Devices 57, 3001 (2010).
  5. Y. C. Ong, D. S. Ang, K. L. Pey, S. J. O'Shea, K. E. J. Goh, C. Troadec, C. H. Tung, T. Kawanago, K. Kakushima, and H. Iwai, "Bilayer gate dielectric study by scanning tunneling microscopy", Appl. Phys. Lett. 91, 102905 (2007). 


  1. Z. G. Dong, H. S. Chu, D. Zhu, W. Du, Y. A. Akirnov, W. P. Goh, T. Wang, K. E. J. Goh, C. Troadec, C. A. Nijhuis, J. K. W. Yang, “Electrically-Excited Surface Plasmon Polaritons with Directionality Control”, ACS Photonics 2, 385 (2015).
  2. H. Qin, K. E. J. Goh, M. Bosman, K. L. Pey, and C. Troadec, “Effect of surface contamination on electron tunneling in the high bias range”, J. Vac. Sci. Technol. A 30, 041402 (2012).
  3. H. L. Qin, K. E. J. Goh, C. Troadec, M. Bosman, and K. L. Pey, “The electronic barrier height of silicon native oxides at different oxidation stages”, J. Appl. Phys. 111, 054111 (2012).
  4. H. L. Qin, K. E. J. Goh, M. Bosman, K. L. Pey, and C. Troadec, “Subthreshold characteristics of ballistic electron emission spectra”, J. Appl. Phys. 111, 013701 (2012).
  5. H. Qin, Z. Liu, C. Troadec, K. E. J. Goh, M. Bosman, B. S. Ong, S. Y. Chiam, and K. L. Pey, “Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy”, J. Vac. Sci. Technol. B 30, 011805 (2012).
  6. Cedric Troadec and Kuan Eng Johnson Goh, “Ballistic Electron Emission Microscopy on Hybrid Metal/Organic/Semiconductor Interfaces”, in Scanning Probe Microscopy, edited by Nikodem Tomczak and Kuan Eng Johnson Goh, World Scientific: Singapore, 2011; p57 – 73.
  7. Cedric Troadec and K. E. Johnson Goh, “Dual parameter BEES analysis of inhomogeneous interfaces”, J. Vac. Sci. Tech. B, J. Vac. Sci. Technol. B 28, C5F1 (2010).
  8. Justin C. W. Song, Kuan Eng J. Goh, Natarajan Chandrasekhar, and Cedric Troadec, " Electrostatic effects of nanoscale dielectric patches in the modification of Schottky contacts", Phys. Rev. B 79, 165313 (2009).
  9. K. E. J. Goh, A. Bannani, and C. Troadec, "Imaging buried organic islands by spatially resolved ballistic electron emission spectroscopy", Nanotechnology 19, 445718 (2008).

Nanofabrication for Quantum Computer/Atom-scale Technologies:

  1. H. Kawai, K.E.J. Goh, M. Saeys, and C. Joachim, “Band Engineering of the Si(001):H Surface by Doping with P and B Atoms.” in: Kolmer M., Joachim C. (eds) On-Surface Atomic Wires and Logic Gates. Advances in Atom and Single Molecule Machines. Springer, Cham (2017).
  2. Francisco Ample, Hiroyo Kawai, Kian Soon Yong, Mark Saeys, Kuan Eng Johnson Goh, and Christian Joachim, “Dangling bond wire circuits on a Si(001)-(2x1):H surface with their contacting nano-pads.”, in preparation for the book entitled Architecture & Design of Molecule Logic Gates and Atom Circuits edited by N. Lorente and C. Joachim, Springer 2012.
  3. S. Chen, H. Xu, K. E. J. Goh, Lerwen Liu, and J. N. Randall, “Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature”, Nanotechnology 23, 275301 (2012).
  4. K. E. J. Goh, J. Ballard, J. N. Randall, and J. R. Von Ehr, “Using patterned H-resist for controlled three-dimensional growth of nanostructures”, Appl. Phys. Lett. 98, 163102 (2011). Also appeared in the Virtual Journal of Nanoscale Science & Technology 23, 1 (2011).
  5. K. E. J. Goh and M. Y. Simmons, “Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices”, Appl. Phys. Lett. 95, 142104 (2009). 
  6. K. E. J. Goh, Y. Augarten, L. Oberbeck, and M. Y. Simmons, "Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal", Appl. Phys. Lett. 93, 142105 (2008). Also appeared in the Virtual Journal of Nanoscale Science & Technology 18, 85 (2008).
  7. T.C.G. Reusch, K. E. J. Goh, W. Pok, N. Lo, S. McKibbin, and M. Y. Simmons, "Morphology and electrical conduction of Si:P delta-doped layers on vicinal Si(001)", J. Appl. Phys. 104, 066104 (2008).
  8. K. E. J. Goh, M. Y. Simmons, and A. R. Hamilton, "Electron-electron interactions in highly disordered two-dimensional systems", Phys. Rev. B 77, 235410 (2008). Also appeared in the Virtual Journal of Nanoscale Science & Technology 17, 79 (2008).
  9. F. J. Rueß, A. P. Micolich, W. Pok, K. E. J. Goh. A.R. Hamilton, M.Y. Simmons, "Ohmic conduction of sub-10 nm P-doped silicon nanowires at cryogenic temperatures", Appl. Phys. Lett. 92, 052101 (2008). Also appeared in the Virtual Journal of Nanoscale Science & Technology 17, 96 (2008).
  10. M. Y. Simmons, F. J. Ruess, K. E. J. Goh, W. Pok, T. Hallam, M. J. Butcher, T. C. G. Reusch, G. Scappucci, A. R. Hamilton, and L. Oberbeck "Atomic-scale silicon device fabrication", Int. J. Nanotechnology 5, 352 (2008).
  11. K. E. J. Goh, M. Y. Simmons, and A. R. Hamilton, "Use of low-temperature Hall effect to measure dopant activation: Role of electron-electron interactions", Phys. Rev. B 76, 193305 (2007).
  12. Frank J. Rueß, Bent Weber, Kuan Eng J. Goh, Oleh Klochan, Alex R. Hamilton, and Michelle Y. Simmons, "One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned", Phys. Rev. B 76, 085403 (2007).
  13. T. Hallam, M. J. Butcher, K. E. J. Goh, F. J. Ruess, and M. Y. Simmons, "Use of a scanning electron microscope to pattern large areas", J. Appl. Phys. 102, 034308 (2007). 
  14. F. J. Rueß, W. Pok, Thilo C.G. Reusch, Matthew J. Butcher, Kuan Eng J. Goh, Lars Oberbeck, Giordano Scappucci, Alex R. Hamilton, and Michelle Y. Simmons, "Realization of Atomically Controlled Dopant Devices in Silicon", Small 3, 563 (2007).
  15. F. J. Rueß, W. Pok, K. E. J. Goh. A. R. Hamilton, M. Y. Simmons, "Electronic properties of atomically abrupt tunnel junctions in silicon",Physical Review B 75, 121303R (2007). Also appeared in the Virtual Journal of Quantum Information 7, 4 (2007).\
  16. . E. J. Goh, L. Oberbeck, M. J. Butcher, N. J. Curson, F. J. Rueß, and M. Y. Simmons, "Comparison of GaP and PH3 as dopant sources for STM-based device fabrication", Nanotechnology 18, 065301 (2007).
  17. F. J. Rueß, K. E. J. Goh. M. J. Butcher, T. C. G. Reusch, L. Oberbeck, B. Weber, A. R. Hamilton, and M. Y. Simmons, "Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy", Nanotechnology 18, 044023 (2007). 
  18. K. E. J. Goh, L. Oberbeck, M. Y. Simmons, A. R. Hamilton, M. J.Butcher, "Influence of doping density on electronic transport in degenerate Si:P delta-doped layers", Physical Review B 73, 035401 (2006).
  19. F. J. Rueß, L. Oberbeck, K. E. J. Goh, M. J. Butcher, E. Gauja, A. R. Hamilton and M. Y. Simmons, “The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures”, Nanotechnology 16, 2446 (2005). 
  20. M. Y. Simmons, F. J. Ruess, K. E. J. Goh, T. Hallam, S. R. Schofield, L. Oberbeck, N. J. Curson, A. R. Hamilton, M. J. Butcher, R. G. Clark and T. C. G. Reusch, “Scanning probe microscopy for silicon device fabrication”, Molecular Simulation 31, 505 (2005).
  21. T. Hallam, F. J. Rueß , N. J. Curson, K. E. J. Goh, L. Oberbeck, M. Y. Simmons and R. G. Clark, "The Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy", Applied Physics Letters 86, 143116 (2005). 
  22. K. E. J. Goh, L. Oberbeck, M. Y. Simmons, "Relevance of phosphorus incorporation and hydrogen removal for Si:P delta-doped layers fabricated using phosphine", Physica Status Solidi A 202, 1002 (2005).
  23. K. E. J. Goh, L. Oberbeck, M. Y. Simmons and R. G. Clark, "Effect of encapsulation temperature on Si:P delta-doped layers", Applied Physics Letters 85, 4953 (2004). Also appeared in the Virtual Journal of Quantum Information 4, 12 (2004). 
  24. F. J. Rueß, L. Oberbeck, M. Y. Simmons, K. E. J. Goh, A. R. Hamilton, T. Hallam, N. J. Curson and R. G. Clark, "Toward atomic-scale device fabrication in silicon using scanning probe microscopy", Nano Letters 4, 1969 (2004).

  1. A cryogenic circular dichroic photoluminescence microscope. SG Patent Application No. 10201801455U, 22 Feb 2018.
  2. Plastic Solder – Conductive Polymer For Electrical Soldering, Singapore Patent Application No. 10201503092S, 20 Apr 2015.
  3. Drive system for hermetic applications and device having such drive system (A*STAR).United States Patent US8557736 B2, 15 Oct 2013. Licensed.
  4. Fabricating nanoscale and atomic scale devices (CQCT, UNSW). United States Patent US7547648, 16 Jun 2009.
  5. Buried quantum device (CQCT, UNSW), PCT/AU2004/001119.

Last updated on : 05 Apr 2019 12:02 PM