2D Materials

Two-dimensional (2D) materials are only a few atoms thick (approx. 10-9 m) but yet exhibit great performance in various applications from digital/analog devices, optoelectronics to flexible electronics and biotechnology. Being void of external chemical bonds when isolated also enables their compatibility with existing conventional materials in the bulk. They represent a means towards further reduction in form factor and enhancement of performance in a future where the physical limit is being reached in today’s ever shrinking devices. We aim to impact the microelectronics industry by providing new perspectives and solutions based on 2D semiconductors to tackle problems present in nano-electronics beyond sub-10 nm node (e.g. mitigating short-channel effects), providing ubiquitous electronics based on ultra-thin large-scale flexible transparent electronics and opto-electronic devices. Since 2015, we have actively pursued research in 2D semiconducting transition metal dichalcogenides (TMDCs) and have yielded numerous high impact publications and several IPs. The team covers a variety of expertise, focusing on large area growth, characterization of high quality TMDCs and their applications in optoelectronic, thermo-electric as well as advanced circuits.


2d-materials

Capabilities

List of expertise and unique capabilities in IMRE:

  • 6” Sputtering Chamber for Physical Vapor Deposition Growth of TMDCs
  • Wafer scale Chemical Vapor Deposition of Metal Disulphides
  • Micro Raman and Photoluminescence spectroscopy for advanced characterization
  • Class 1000 cleanroom for device fabrication
  • Angle resolved Photoemission Spectroscopy for electronic band structure analysis
Capabilities 2D

Highlights & Achievements

Through collaborative efforts with our research partners in the universities (NUS, NTU), together with our sister RI (IHPC), we have made a number of impactful scientific findings and technological achievements over the years. Listed below is a non-exhaustive list of our research highlights till date:

Chemical Vapor Disposition

  • Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier, Y.F. Lim et al., ACS Nano, 2018, 12, 1339
  • “Method for wafer scale growth of MoS2 based on sulphur vapor trap”, Singapore Patent Application No. 10201902303S 
    Media Highlight
  • “No barrier to applications for a remarkable 2-D material”, https://phys.org/news/2018-06-nobarrier-applications-remarkable-d-material.html

Large scale logic gates – Inverters & NAND on CVD-MoS2

  • Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition, Z.L. Wang et al., Adv. Electron. Mater. 2019, 1900393

Demonstration of CVD-MoS2 memtransistors,

  • Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application, Z.L. Wang et al., Adv. Funct. Mater. 2019, 1901106

Physical Vapor Deposition

  • “A novel sputtering system with central electrode and hollow sputtering cathode for 2D film deposition”, PCT Patent Application No. PCT/SG2018/050462

Demonstration of gigantic spin injection into PVD grown 2D MoS2,

  • Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2, L. Cheng et al., Nature Physics 2019, 15, 347

p-type doping of TMDCs with atomic nitrogen

  • Direct n- to p-Type Channel Conversion in Monolayer Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment, B.S. Tang et al., ACS Nano 2018, 12, 2506

Selective self-assembly of organic molecules on MBE grown MoSe2 mirror twin boundaries

  • Selective self-assembly of 2,3-diaminophenazine molecules on MoSe2 mirror twin boundaries, X.Y. He et al., Nature Communications 2019, 10, 2847

Contact

Dr. Chi Dongzhi, dz-chi@imre.a-star.edu.sg

Dr. Lim Yee Fun, limyf@imre.a-star.edu.sg

General: industry@imre.a-star.edu.sg

We welcome queries and collaboration partners for both the research and commercialization of 2D materials related technologies and devices.