STEM imaging of HEMT stack and 1.0 µm ×1.0 µm AFM roighnroughness of about 0.1 nm
Fig. 3. 200 mm AlGaN/GaN HEMT on Si(111) and related studies to increase breakdown voltage at a lower gate to drain spacing,. The ultrasmooth f HEMT epilayers are achieved by tight control of inetrfaces duing MOCVD processes.
Technology development toward 200 mm 4H-SiC Power Electronics:
SiC power electronics has demonstrated improved efficiencies, reduced size, and reduced weight when compared to conventional Si technology. But mass scale technology deployment needs extensive R & D on large diameter 4H-SiC. Our current R & D is focused on 200 mm SiC solution toward 10 cents/A for 100 A switches and SiC front-end processes for 1200-3300 V applications.
- The Phase I of our proposal is focused on the defect reduction R & D and commercialization possibilities with 150 - 200 mm substrates and epiwafers development, with a target micro-pipe density <1 cm-2 in bulk, and with a TSD target <300 cm-2 in epiwafers.
- Development of 4H-SiC using modified physical vapour transport processes, crucible customization for SiC ingots, wafer manufacturing by dicing/grinding/polishing with materials characterization support using HRXRD, XRT, FTIR, AFM, Optical inspection: micro-PL, micro-Raman, electron microscopy: SEM, TEM, STEM-EELS/CL, and electrical characterization with breakdown voltage testing on 1200-3300 V epiwafers.
- The Phase II of this SiC program is seeking industry partnerships and cooperation interests to develop 1200-3300 V rated 4H-SiC MOSFETs for power switches, with a focus on device manufacturing in Singapore and reliability qualifications for usage in transport, renewables and micro-grids.
Dr. Tripathy Sudhiranjan, email@example.com
Dr. Chiam Sing Yang, firstname.lastname@example.org
We welcome queries and collaboration partners for both the research and commercialization of wide bandgap materials related processes, technologies and devices.