Technology Lecture: Electrophysical and Optical Characteristics of Silicon-based MOS Structures with a Tunnel-thin Insulating Layer

Date: 14 May 2010 - 14 May 2010

Venue: SIMTech Training Room, Tower Block, Level 3

Metal-insulator-semiconductor (MIS) structures are the most critical part of modern semiconductor technology. Reliability of such structure is a major concern in the semiconductor industry, particularly for electrostatic discharge protection during ultra-fast ESD (electrostatic discharge) events. This presentation will summarise the results of an investigation into the properties and applications of MIS structures with several nanometer-thick oxide, performed by the research team of the speaker within the last two decades. Key topics include the fundamental information on metal/tunnel-oxide/semiconductor structures, including the electrical characteristics of the fabricated AI/SiO2/Si bipolar MIS tunnel devices; hot electro-injection into silicon and related energy relaxation phenomena, numeric simulation of the tunnel current-voltage characteristics, experimental and theoretical study towards the light emission from MOS (metal-oxides-semiconductor) structures, degradation and breakdown of ultrathin oxide films, applications of MIS tunnel structures for the measurements of tunnel barrier and energy relaxation parameters.

About the Speaker
Dr Mikhail Vexler obtained his doctorate in 1996 and is an expert in the area of reliability of MOS tunnel structures. He is currently responsible for leading a group of researchers at Loffe Institute in St. Petersburg to work on the theoretical and experimental evaluation of photon emission of spectra from silicon-based devices.  His research interests encompass the general properties of MOS tunnel devices; biopolar transistors and thyristors with an MOS tunnel emitter; implementation of tunnel current models in the Monte Carlo simulators of MOS devices; tunnel electron transport in heavy-doped MOS structures; a reversely-biased STM contact with a semiconductor surface; hot electron energy relaxation phenomena in silicon and simulation of SONOS/TANOS memory elements, etc. He is an author / co-author of 90 scientific publications and 4 books. 

10.45am    Registration

11.00am    Lecture by Dr Mikhail Vexler

11.45am    Q&A

12.00pm    End

Who Should Attend  
R&D Managers, research academic staff, students and industry professionals involved in semiconductor development, failure analysis, photon emission of semiconductor devices and ultrathin insulating films on silicon.

Registration for the lecture is free of charge. Seats are available on first-come, first-served basis.

For Technical enquiries: Mr Isakov Dmitry, Tel: 6793 2375; Email:

For general enquiries: Alice Koh, Tel: 6793 8249, Email: