The seminar targets to introduce semiconductor industry about new trends in semiconductor characterization and failure analysis. Participants will gain a better understanding of the two novel technologies that can address issues of front-end chacterization using optical properties at sub-100nm level. The first technique is Multi-scale Photon Emission Nanoscopy developed in SIMTech. The second technique is a revolutionary Cathodoluminescence system from the technology leader in this area, Attolight (Switzerland). The event will also serve as an avenue to build up the network of users and potential adopters of these two technologies. This seminar is co-organised by Swissnex Singapore.
Quantitative Cathodoluminescence: A Novel Approach to Characterize Semiconductor Nano-Materials
The speakers will give an introduction to cathodoluminescence (CL), a powerful excitation spectroscopy method featuring nanometer-scale spatial resolution. A comparison of CL and other standard methods like photoluminescence will be shown. The speakers will also introduce the Attolight approach to cathodoluminescence. We will give an overview of applications demonstrating the method to probe optical properties at a nanoscale of different semiconductor structures. In particular, they will show the ability of CL to determine threading dislocation densities on GaN wafers for LED production. The power of CL to rapidly verify new production processes will also be demonstrated through an example in power electronics. Examples of CL used for failure analysis and on novel materials for semiconductor industry will also be given. Finally, complementary methods that can be integrated with CL will also be discussed.
Multi-scale Photon Emission Nanoscopy for Sub-100 nm characterization of
The speaker will introduce Photon Emission Nanoscopy (PEN) and its new applications. PEN is an optical near-field technique that allows detection with sub-100nm resolution of weak emissions in biased semiconductor devices. The emission’s signatures can provide valuable information about device performance and root cause of failures. The signature consists of the emission wavelength, location, spatial distribution, dependence on biasing conditions, etc. Particularly powerful PEN becomes when it is applied to front-end-of-line devices that that are processed only up to silicide level. In this case, the emissions are not shadowed by opaque metal contacts and PEN probe can reach the actual near-field of the emission source. In the presentation, we will show the latest results of applying PEN to such devices and the potential benefits that such imaging can provide to semiconductor industry. From these examples it will also be clear why the PEN design required a multi-scale feature.
About the Speakers
Mr Olivier Gougeon is an Engineer graduated from (National Institute of Applied Sciences, Lyon (INSA) in Materials Science and obtained a MS of Semiconductor Physics from University Claude Bernard in France. He started as a professional actor before joining the industry, where he has spent over 15 years in different technical sales, marketing and business development management positions, mostly in the semiconductor industry. He joined the management team of Attolight in 2011 to bring his experience in management, business strategy and customer dedication.
Dr Sonderegger Samuel studied at Swiss Federal Institute of Technology, Lausanne (EPFL) and Ecole Normale Supérleure de Lyon (France) and obtained his master of science degree in Physics from EPFL. His Master thesis on the optical properties of semiconductors was conducted at the Loffe Physico-Technical Institute (Russia). During his PhD at EPFL, Samuel further developed Attolight’s ultrafast cathodoluminescence technology and used this technique to advance the understanding of optical properties of nitride based semiconductors. Samuel decided to jump into the entrepreneurial world after his PhD thesis and co-founded Attolight with Jean Berney. Since then he has heading the business development of the company.
Dr Isakov Dmitry obtained MS of Physics from Moscow State University (Russia) and PhD in Electrical & Computer Engineering in National University of Singapore. His PhD thesis was focused on development of the scanning near-field photon emission microscopy that allowed for photon emission detection at wavelengths above 1µm to improve the spatial resolution from ~ 1µm to sub-100 nm level. After obtaining his PhD, he continued with development of the near-filed approach in SIMTech as a Research Scientist. Particular focus of his research is to make the near-field approach applicable to wide variety of samples and on improvement of overall system capabilities. As a result of this research, SIMTech team has developed a new Multi-scale Photon emission nanoscopy that can address waver level structures that are processed only up to silicide level. He has put an effort on linking the photon emission intensity to the device performance characteristics.
11.00am Quantitative Cathodoluminescence: A Novel Approach to Characterise
11.45am Multi-scale Photon Emission Nanoscopy for Sub-100 nm characterization of
12.30pm Lunch & Networking
Who Should Attend
Failure analysis engineers and lab managers, semiconductor design laboratories managers and engineers, research community from material sciences and electrical engineering.
This seminar is free of charge. Seats are available on first-come, first-served basis. To reserve a place, please register online.
For technical enquiries, please contact Dr Isakov Dmitry, Email:dmitryi@SIMTech.a-star.edu.sg; Tel:6793 2375
For general enquiries: Alice Koh, Email: firstname.lastname@example.org; Tel: 6793 8249