Researcher Portfolio

QI Guojun (Dr)
Senior Scientist III
6419 7420
Surface Technology
Introduction:

Dr Qi Guojun graduated from Northeastern University of Technology (1982), Shenyang, China, and received his PhD Eng from Tohoku University (1989), Japan. His research interests include surface finishing by wet chemical processing, surface microstructuring, electronics packaging, and resource reuse and recycling. Previously, he has led many industrial and in-house projects related to process development on electrochemical deposition, microfabricaiton, and industry wastewater treatment.

Research Interest:
Surface finishing by wet chemical processing, surface microstructuring, electronics and MEMS packaging, electronics displays, and electrochemical sensors
BioNotes:PhD Eng, MEng, B Eng
Publications:
  1. Guojun Qi, Xingfu Chen and J Yin and Liu Fengmin, Influence of Bath Chemistry on Zincating Morphology of Aluminium Bond Pad, Thin solid Films,406 (2002), 204 - 209

  2. Guojun Qi, Lambertus G J Forkkink and Kee Heng Chew, Zincation Morphology of Aluminium Bond Pad: Its Influence on Quality of Electroless Nickel Bumps, Thin Solid Films, 406 (2002), 219-223

  3. Guojun Qi, Min He and Zhong Chen, Reaction of Sn-Bearing Solders with Nickel-Based Under Bump Metallisations, Proceedings of Yazawa International Symposium, in conjunction with the 132nd TMS Annual Meeting & Exhibition, San Diego, 2 – 6 March, 2003, vol. 1, 1173-83

  4. J F Li, X.B. Zeng, X W Sun and G J Qi, In Situ Resistance Measurement on Nickel-Induced Lateral Crystallisation of Amorphous Silicon, Jpn. J. Apll.Phys., 42 (2003), L898-L900

  5. G K Lau, G J Qi, A  Primanti, F M Liu and H J Du, An Integral Flexure for Rotary Actuators in Hard Disk Drives, Sensors & Actuators, 113(2004), 116-124

  6. J F Li, X B Zeng, X W  Sun and G J  Qi, Field Aided Lateral Crystallisation of Amorphous Silicon with Large Grain Formation, Thin Solid films, 458(2004), 149-153

  7. Min He, Zhong Chen and Guojun Qi, Solid State Reaction of Sn-37Pb and Sn-3.5Ag Solders with Ni-P Under Bump Metallisation, Acta Materialia, 52 (2004), 2047-2056

  8. R Cai,  F Liu,  I F Annergren,  and G J Qi, High Smoothness Finishing of Stainless Steel Surface by Chemical Polishing,  International Journal of Manufacturing Science and Technology, vol.6, No. 2, pp. 19, 2004

  9. M He, A Kumar, P T  Yeo, G  J Qi and Z Chen, Interfacial Reaction between Sn-Rich Solders and Ni-Based Metallisation, Thin Solid Films, 462-463, 2004, pp.387-394

  10. M He, Z Chen, G J Qi, C C Wong and S Mhaisalkar, The Effect of Post Reflow Cooling Rate on Intermetallic Compound Formation between Sn-3.5Ag Solder and Ni-P Under Bump Metallisation, Thin Solid Films, 462-463, 2004, pp.363-369

  11. M He, W H Lau, G J Qi and Z Chen, Intermetallic Compound Formation between Sn-3.5Ag Solder and Ni-Based UBMs during Liquid State Reaction, Thin Solid Films, 462-463, 2004, pp.376-383

  12. Z Chen, M He and G J Qi, Morphology and Kinetic Study of the Interfacial Reaction between the Sn-3.5Ag Solder and Electroless Ni-P Metallisation, Journal of Electronic Materials, 33, 2004, 1465-72 

  13. J F Li, X W Sun, M B Yu, G J Qi, X T Zeng, Nickel induced lateral crystallisation behaviour of amorphous silicon films, Applied Surface Science, 240(2005), 155-160

  14. M He, Z Chen, G J Qi, Mechanical Strength of Thermally aged Sn-3.5Ag/Ni-P Solder Joints, Metallurgical and Materials Transactions A, 36A (2005), pp. 65-75

  15. G J Qi, S Zhang, T T Tang, J F Li, X W Sun and X T Zeng, Experimental study of aluminum-induced crystallisation of amorphous silicon films, Surface and Coating Technology, 198(2005), 300-303

  16. J F Li, X W Sun, G J Qi, J K O Sin, Z H Huang and X T Zeng, Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallisation, IEEE Electron Device Letters, 26(2005), No. 11, 814-816

  17. Z H Huang, W M Su, G J Qi, and X T Zeng, A method for undercut formation of integrated shadow mask used in passive matrix displays, Thin Solid Films, Volume 503, Issues 1-2, 1 May 2006, Pages 246-249

  18. Z. Chen, M. He, A. Kumar, G. J. Qi, Effect of Interfacial Reaction on the Tensile Strength of Sn-3.5Ag/Ni-P and Sn-37Pb/Ni-P Solder Joints, Journal of Electronic Materials, 36(2007), 17-25

  19. Z  H  Huang, G J  Qi, X  Zeng, D Lukito and W  M Su, Design and fabrication of a novel integrated shadow mask for passive matrix OLDE devices, Thin Solid Films, vol. 18(517), pp. 5280-5283 (May-2009)

  20. Q Z Yang, R S Ng, G J Qi, H C Low, Y P Zhang,  Economic Viability of Nickel Recovery from Waste Catalyst, Key Engineering Materials, pp. 765-769, vol. 447-448, (Jul-2010)

  21. Y L Wu, Y Y Feng, G J Qi, Chemical Surface Treatment for Enhanced Bonding Strength between Polymer Coating and Aluminum Alloy, Key Engineering Materials, pp. 720-724, vol. 447-448,(Jul-2010)

  22. Q Z  Yang, G J  Qi, H C Low and B Song, Sustainable recovery of nickel from spent hydrogenation catalyst: Economics, emissions and wastes assessment, Journal of Cleaner Production , Volume 19, Issue 4, March 2011, Pages 365-375

  23. Tang Jiao Huang, Xuesong Yin, Guojun Qi, and Hao Gong, CZTS-based materials and interfaces and their effects on the performance of thin film solar cells, Phys Status Solidi RRL 8, No. 9, 735–762 (2014)

  24. Tang Jiao Huang, Xuesong Yin, Chunhua Tang, Guojun Qi and Hao Gong, A low-cost, ligand exchange-free strategy to synthesise large-grained Cu2ZnSnS4 thin-films without a fine-grain underlayer from nanocrystals, J. Mater. Chem. A, 2015, 3, 17788

  25. Tang Jiao Huang, Zhang Xian Thiang, Xuesong Yin, Chunhua Tang, Guojun Qi, and Hao Gong, (CH3NH3)2PdCl4: A Compound with Two-Dimensional Organic–Inorganic Layered Perovskite Structure, Chem. Eur. J. 2016, 22, 1 – 8

  26. G Yoganandan, J N Balaraju, Christopher H C Low, Guojun Qi , Zhong Chen, Electrochemical and long term corrosion behaviour of Mn and Mo oxyanions sealed anodic oxide surface developed on aerospace aluminium alloy (AA2024), Surface & Coatings Technology 288 (2016) 115–125