Direct-write Fabrication of Integrated Circuits for Single Nanowires

Ref: B0004

Research Institutes: Institute of Bioengineering and Nanotechnology (IBN)

Tech readiness: Concept

Intellectual Property: Patent - Pending

Category: Healthcare - Diagnostics

Author: Mary


As the complementary metal–oxide–semiconductor (CMOS) scaling is reaching its theoretical limit, much attention is being paid to alternative materials such as semiconducting nanowires. Nevertheless, the lack of controlled assembly, fabrication intricacy and low throughput are posing persistent challenges to advance from a single device level to a functional circuit level. The conventional e-beam lithography approach suffers from low throughput, due to multiple process steps, and registering individual nanowire (nanotube)–electrode interconnects. We have developed a higher throughput lithography-free, ‘direct-write’ method to produce discrete as well as integrated device elements (D-mode and E-mode FETs) on a single crystalline nanowires.

Our Innovation

The technology is unique in that it only requires a one-time introduction of the sample into vacuum chamber ensures nanoscale alignment. No coating of resist needed which results in higher sample purity & throughput. Furthermore, direct deposition of metal or insulator is done in a highly defined manner from gas precursors.

Potential Applications

The potential applications of this technology would feed heavily into the manufacturing sector. Manufacturing for next generation nanoscale logic devices and ultra-dense IC chips has been picking up with an increased interest shown. This technology has the ability to fabricate D-mode and E-mode FETs on single-crystalline nanowires which would be appealing to manufacturing companies and providers. 

Our Value Proposition

According to Internal Technology Roadmap (ITRS), planar MOSFETs are predicted to disappear by 2015, and 3D multiple gate (or Fin type) structures will be introduced because of their ability to easily suppress the short-channel effects (SCE).  It is inevitable that FinFETs will change to nanowire FETs, because of their greater control of CE and larger channel area for the nanowire surface per unit area. 

Our technology has the potential to be used in fabricating next generation nanowire FETs and ICs based on Silicon – Nanodevice ‘hybrid technology’ platform.

Key Features of this Tech:

  • Focused ion beam (FIB) or Focused electron beam (FEB) assisted “direct write” method with higher throughput
  • Higher sample purity is achieved as resist coating is not required
  • Achieves alignment of nanotube/nanowire – electrode interconnects
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