Dr AARON LAU, IMRE, A*STAR
Quantum Device Engineering
Abstract
2D semiconductors have the potential for quantum applications, but progress is severely hindered by contact and dielectric engineering. Aaron will discuss IMRE's efforts in establishing high-quality contacts at cryogenic temperatures. Aaron will reveal new insights into the nature of metal/2D semiconductor interface and carrier quantum transport. Next, he will discuss their work on dielectric influence on carrier transport, where they showed that carrier mobilities are due to a frequently overlooked factor, interface roughness. Aaron will also report the first gate-defined grown bilayer WS2 quantum dot, a key breakthrough towards 2D semiconductors-based quantum devices.
Biography
Dr. Aaron Lau is an experimental quantum scientist who engineers and studies next-generation materials and devices to understand the physics of low-dimensional systems. He graduated from the National University of Singapore in 2012 with a Bachelor of Science (Physics), first-class honours, before receiving the A*STAR Graduate Scholarship to pursue his Ph.D. at the University of Oxford. There, he worked on quantum transport through single-molecule electronics. He returned to A*STAR IMRE in 2017 where he now works on atomically thin materials for quantum applications.