R&D Foundry
The Institute of Microelectronics (IME) offers a broad range of services to our customers to meet the research and development (R&D) needs of the semiconductor and related industries.
IME’s Fab is located in-house and provides R&D services related to advanced packaging, piezo MEMS, photonics and flat optics, wide bandgap semiconductors, and Medtech applications. IME is equipped with industry-standard 200 mm and 300 mm wafer processing equipment in 3000 m2 of Class-10 cleanroom facilities, supported by metrology, assembly, material characterization and electrical characterization laboratories.
Lithography
- GHI-line Steppers (>0.8 µm L/S)
- ArF Immersion scanner (>45 nm L/S)
Physical Vapor Deposition
- Ta/TaN Cu barrier seed
- Al/ Ti / TiN
Chemical Vapor Deposition/Atomic Layer Deposition
- Cu RDL, Cu pillar, Cu TSV, Cu damascene
- UBM, SnAg bump
Electroplating (ECP)
- Cu RDL, Cu pillar, Cu TSV, Cu damascene
- UBM, SnAg bump
Bonding
- Polymer/glue bonding
- Fusion bonding
- Hybrid bonding
- Metal TCB/Eutectic bonding
Metrology
- Macro & Micro Defect Review
- Defect Review SEM
- Sidewall Roughness
- Surface Morphology
- Film Stress/ Warpage
- Film Thickness measurements
Furnace
- Anneal
- Polymide , Dielectric Cure
Etch
- Desdum
- Silicon
- Oxide
- Silicon-Nitride
Customized Solutions
- Specialty CVD/PVD depositions
- New materials evaluations
IME offers advanced lithography services printing 45nm and above patterns for 300mm wafers using immersion lithography. Defect review capability for 30nm above pattern defects, surface defects, advanced overlay and CD measurement are also available.
Lithography
- 365nm Stepper
- 193nm Immersion Scanner
Physical Vapor Deposition
- Cu
- Al
- Ti / TiN
Atomic Layer Deposition
- HfO2 / HfN
- Al2O3
Chemical Vapor Deposition
- Silicon Nitride
- Silicon Oxide
Bonding
- Temporary / Permanent
- Fusion
- Polymer
- Hybrid
- Metal
Metrology
- Macro & Micro Defect Review and Binning
- Defect review SEM
- Sidewall Roughness
- Surface Morphology
- Film Stress / Warpage
- Thickness Measurements
Electroplating (ECP)
- Cu Pillar, RDL, UBM
- TSV Cu
Furnace
- Anneal
- Polymide, Dielectric Cure
Etch
- Descum
- Silicon
- Oxide
- Silicon-Nitride
- Aluminium
Customized Solutions
- Specialty CVD / PVD Depositions
- New Materials Evaluations
- Deep Machines Learning Applications
Chemical and Mechanical Polish
- Silicon oxide
- Copper
- Titanium
Material Devices and Reliability Analysis (MDRA) has the capabilities and cutting-edge facilities to conduct world-class research and development in semiconductor technology. We provide materials and process characterization, failure analysis, and reliability testing to support our industry partners in wafer fabrication, packaging, assembly, and test.
12" Probe Station
- Automated IV, CV measurements on 12" wafers
FEI Double beam FIB
- Up to 65 nA Ga* beam current under 30KV
- High resolution SEM/STEM imaging (0.6nm at 15KV)
- In-situ TEM sample preparation
FE-SEM
- High resolution SEM imaging with EBSD and EDX analysis (0.8nm at 15KV)
3D X-Ray
- Nondestructive 3D X-Ray imaging
- High spatial resolution to 500nm
Ar Ion Milling/Polisher
- Sample preparation for SEM and optical microscope analysis
CSAM Sonix
- Transducers from 15 KHz to 230MHz for C-Scan/T-Scan analysis
- 12" warped wafer compensation
Thermal Shock Chamber
- Test standard JESD22-A104
- Temperature range (-70°C to 300°C)
Thermal Humidity Chamber
- Test standard JESD22-A101
- Temperature stress: 85°C & relative humidity stress: 85%
ESD Tester
- MM/HBM Test
High temperature storage chamber
- Test standard JESD22-A103
- Temperature storage up to 300°C
Thermal Shock (liquid to liquid)
- Test standard JESD22-A106
- Temperature range (-65°C to 200°C)
FEI TEM (CM200)
- 200KV transmission electron beam analysis (resolution < 0.14nm)