Wide-bandgap Group (WBG)
Wide-bandgap technologies are based on next-generation semiconductors like silicon carbide (SiC) and gallium nitride (GaN). These semiconductors are commonly applied in applications like power electronics and radio-frequency millimeter wave power amplifiers.
Power electronics involves the control and conversion of electricity using solid-state electronic devices. It is estimated that at least 50% of electricity around the world is controlled by power devices, which are ubiquitously applied throughout all aspects of our lives. While power electronics is currently dominated by silicon-based devices, next-generation power electronics will be based on wide-bandgap materials like silicon carbide (SiC) owing to its high breakdown electric field. With higher energy efficiencies and smaller form factors, SiC power devices can yield annual energy savings estimated to be in the range of tens of billions of kilowatt hours worldwide. SiC power electronics is instrumental in applications like electric vehicles (traction inverters and on-board chargers), data centers (power supplies) and renewable energy (inverters for solar energy or wind energy).
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